MT29F512G08CECBBJ4-37:B TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,254 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 267 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CECBBJ4-37:B TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08CECBBJ4-37:B TR is a 512 Gbit non-volatile FLASH memory device using NAND (MLC) technology in a parallel memory organization. It provides a 64G × 8 memory organization with a parallel interface and a 267 MHz clock for designs that require high-density parallel flash storage.
This device is supplied in a 132-VBGA (12 × 18) package and operates from a 2.7 V to 3.6 V power rail with an ambient operating temperature range of 0°C to 70°C, making it appropriate for commercial-temperature embedded storage applications.
Key Features
- Memory Technology NAND FLASH (MLC) non-volatile memory providing 512 Gbit storage capacity.
- Organization & Capacity 64G × 8 memory organization delivering 512 Gbit total memory density for high-capacity storage needs.
- Interface & Performance Parallel memory interface with a 267 MHz clock frequency for parallel-access designs.
- Power Operates from a 2.7 V to 3.6 V supply range to match common system power rails.
- Package 132-VBGA package (12 × 18 mm) for a compact footprint suited to space-constrained PCBs.
- Temperature Range Commercial operating ambient range of 0°C to 70°C (TA).
- Manufacturer Produced by Micron Technology Inc., identified by part number MT29F512G08CECBBJ4-37:B TR.
Typical Applications
- Embedded Storage: High-density non-volatile storage for embedded systems that require 512 Gbit FLASH in a parallel interface.
- Firmware and Boot Storage: Storing firmware, boot code, or large system images where parallel NAND FLASH with a defined organization is required.
- Compact PCB Designs: Systems that require a small-footprint 132-VBGA package to integrate large-capacity FLASH in constrained board areas.
Unique Advantages
- High Storage Density: 512 Gbit capacity in a single device reduces the need for multiple components to achieve large storage volumes.
- Parallel Interface Compatibility: Parallel memory organization and 267 MHz clock support designs that utilize parallel-access NAND architectures.
- Compact Packaging: 132-VBGA (12 × 18) delivers a compact form factor for space-limited applications.
- Flexible Power Range: 2.7 V to 3.6 V supply voltage accommodates common system power domains.
- Commercial Temperature Suitability: Rated for 0°C to 70°C ambient operation for standard commercial deployments.
- Established Manufacturer: Provided by Micron Technology Inc., ensuring traceability to a known memory supplier.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08CECBBJ4-37:B TR positions itself as a high-density, parallel-interface NAND FLASH device suitable for designs that require 512 Gbit of non-volatile storage in a compact VBGA package. Its MLC NAND architecture, 64G × 8 organization, and 267 MHz clock make it appropriate for systems designed around parallel flash access.
This device is a practical choice for engineers and procurement teams targeting commercial-temperature embedded applications that need substantial onboard storage while maintaining a compact board footprint and standard 2.7 V–3.6 V power compatibility. Sourced from Micron Technology Inc., it offers a clearly specified component for integration into parallel NAND-based storage designs.
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