MT29F512G08CECBBJ4-5M:B TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 740 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CECBBJ4-5M:B TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08CECBBJ4-5M:B TR is a 512 Gbit non-volatile flash memory device based on NAND (MLC) technology. It is organized as 64G × 8 and provides a parallel memory interface with an indicated clock frequency of 200 MHz.
Designed for systems that require high-density parallel NAND storage in a compact package, the device offers defined electrical and thermal operating ranges for straightforward integration into embedded designs.
Key Features
- Memory Technology NAND (MLC) non-volatile flash memory providing multi-level cell storage.
- Density & Organization 512 Gbit capacity organized as 64G × 8.
- Interface & Performance Parallel memory interface with a clock frequency of 200 MHz.
- Power Voltage supply range of 2.7 V to 3.6 V for device operation.
- Package 132-VBGA package, supplier device package 132-VBGA (12×18), suitable for compact board-level mounting.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
- Memory Format Flash memory format with parallel interface for direct memory-mapped implementations.
Typical Applications
- Embedded Storage High-density parallel NAND flash for systems requiring large non-volatile memory capacity in a single device.
- Board-Level Memory Expansion Parallel interface and compact 132-VBGA package enable integration where space-constrained, high-capacity storage is needed.
- Industrial and Consumer Electronics Use in designs operating within the specified 0°C to 70°C ambient range and 2.7 V–3.6 V supply envelope.
Unique Advantages
- High Density Storage: 512 Gbit capacity supports large data storage in a single device footprint.
- Parallel Interface: Parallel memory access with a 200 MHz clock frequency enables integration into parallel memory subsystems.
- Wide Supply Range: Operates across 2.7 V to 3.6 V, providing flexibility with common system power rails.
- Compact VBGA Package: 132-VBGA (12×18) package reduces board area while delivering high capacity.
- Defined Operating Conditions: Specified ambient temperature range of 0°C to 70°C for predictable deployment environments.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08CECBBJ4-5M:B TR positions itself as a high-density, parallel NAND flash option offering 512 Gbit in a compact 132-VBGA package. Its combination of MLC NAND technology, parallel interface with a 200 MHz clock frequency, and a 2.7 V–3.6 V supply range makes it suitable for designs that need substantial non-volatile storage with defined electrical and thermal parameters.
This device is appropriate for designers and engineers specifying large-capacity flash memory where board space, voltage compatibility, and clear operating limits are important considerations. The documented organization and package details support predictable integration into system designs.
Request a quote or submit a quote request to obtain pricing, availability, and lead-time information for the MT29F512G08CECBBJ4-5M:B TR.
