MT29F512G08CEHBBJ4-3R:B TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 326 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CEHBBJ4-3R:B TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08CEHBBJ4-3R:B TR is a 512 Gbit non-volatile FLASH memory device based on NAND MLC technology with a parallel memory interface and a 132-VBGA package. It provides high-density storage in a compact BGA footprint for designs that require parallel NAND FLASH memory.
Key attributes include a 64G × 8 memory organization, a 333 MHz clock frequency, and a nominal operating voltage range of 2.5 V to 3.6 V, supporting a range of system power domains and performance points.
Key Features
- Memory Technology NAND FLASH (MLC) non-volatile memory suitable for high-density storage applications.
- Capacity & Organization 512 Gbit total capacity arranged as 64G × 8 for byte-oriented access and system integration.
- Interface & Performance Parallel memory interface with a 333 MHz clock frequency for synchronized system operation.
- Voltage Range Operates from 2.5 V to 3.6 V, accommodating typical system power rails.
- Package 132-VBGA (12 × 18 mm) ball grid array package that minimizes board area for high-density designs.
- Operating Temperature Specified for 0 °C to 70 °C (TA), appropriate for standard commercial temperature environments.
Typical Applications
- Systems requiring non-volatile storage — Use as large-capacity NAND FLASH for code, firmware, or data storage in systems designed for parallel memory interfaces.
- Embedded platforms — Provides dense on-board storage in compact BGA form factors where board area is constrained.
- Consumer and industrial electronics — Integration where commercial temperature range (0 °C to 70 °C) and 2.5 V–3.6 V supply compatibility match system requirements.
Unique Advantages
- High-density storage: 512 Gbit capacity enables substantial code and data storage within a single device, reducing the need for multiple memory components.
- Parallel interface support: Parallel memory interface combined with 64G × 8 organization simplifies integration into designs expecting byte-wide NAND FLASH.
- Flexible power compatibility: Wide supply range (2.5 V–3.6 V) supports integration across systems with different voltage domains.
- Compact BGA package: 132-VBGA (12 × 18) footprint delivers high density in a small board area to optimize PCB layout.
- Commercial temperature rating: Specified 0 °C to 70 °C operation aligns with standard commercial applications and environments.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08CEHBBJ4-3R:B TR positions itself as a high-density parallel NAND FLASH memory solution that balances capacity, package compactness, and supply-voltage flexibility. Its 512 Gbit capacity and 64G × 8 organization make it suitable for designs that require substantial non-volatile storage in a single device.
This device is well suited to engineers and procurement teams specifying commercial-temperature, parallel-interface FLASH for embedded platforms and electronic systems where board space efficiency and a broad voltage operating window are important.
Request a quote or contact sales to discuss pricing, availability, and volume options for the MT29F512G08CEHBBJ4-3R:B TR.
