MT29F512G08CECBBJ4-5M:B

The MT29F512G08CECBBJ4-5M:B is a 512 Gbit non-volatile NAND flash memory device implemented with multi-level cell (MLC) technology and organized as 64G × 8. It provides parallel flash storage in a 132-VBGA (12 × 18) package and supports a parallel memory interface with a 200 MHz clock frequency.

This device is intended for applications that require high-density parallel NAND flash memory within a 2.7 V to 3.6 V supply range and an ambient operating temperature of 0°C to 70°C.

Key Features

• Memory Type & Technology Non-volatile NAND flash using MLC technology with a total memory size of 512 Gbit, organized as 64G × 8.
• Interface & Timing Parallel memory interface supporting a 200 MHz clock frequency for synchronous operation.
• Voltage Supply Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system supplies.
• Package Supplied in a 132-VBGA (12 × 18) package suitable for board-level mounting.
• Operating Temperature Specified for ambient operation from 0°C to 70°C (TA).
• Memory Organization & Format Organized as 64G × 8 and provided in a parallel flash memory format.

Typical Applications

• Embedded Storage — High-density parallel NAND flash for embedded systems requiring large non-volatile storage capacity.
• Firmware and Code Storage — Storage of system firmware and code images where parallel flash memory is used.
• Mass Storage Modules — Integration into modules or subsystems that require 512 Gbit of parallel NAND flash memory.
• Systems within 0°C–70°C — Use in equipment and products that operate within the specified ambient temperature range.

Unique Advantages

• High-density 512 Gbit capacity: Provides substantial non-volatile storage in a single device, simplifying board-level memory architecture.
• Parallel interface with 200 MHz clock: Enables integration into designs that utilize parallel NAND memory timing and signaling.
• Standard 3.3 V-compatible supply range: Operates from 2.7 V to 3.6 V to match common system power rails.
• Compact VBGA package: 132-VBGA (12 × 18) package offers a high-density form factor for space-constrained PCBs.
• MLC NAND technology: Multi-level cell organization supports higher density per die for storage-focused applications.

Why Choose MT29F512G08CECBBJ4-5M:B?

The MT29F512G08CECBBJ4-5M:B combines 512 Gbit MLC NAND flash density with a parallel interface and a 132-VBGA package to deliver a compact, board-level storage option for systems operating within 0°C to 70°C and a 2.7 V–3.6 V supply range. Its 64G × 8 organization and support for a 200 MHz clock make it suitable for designs that require parallel flash memory integration.

This device is appropriate for designers and procurement teams specifying non-volatile parallel flash for embedded storage, firmware retention, or module-level mass storage where the provided electrical, thermal, and package specifications align with system requirements.

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