MT29F512G08AUEBBH8-12:B
| Part Description |
IC FLASH 512GBIT PAR 152LBGA |
|---|---|
| Quantity | 293 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-LBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-LBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08AUEBBH8-12:B – IC FLASH 512GBIT PAR 152LBGA
The MT29F512G08AUEBBH8-12:B is a 512 Gbit non-volatile NAND flash memory organized as 64G × 8 and implemented in SLC technology. It provides parallel memory access and is supplied in a 152‑LBGA (14 × 18 mm) package for board-level integration.
Key electrical and environmental parameters include an operating voltage range of 2.7 V to 3.6 V, a clock frequency of 83 MHz, and an ambient operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Type and Capacity 512 Gbit NAND flash, organized as 64G × 8, implemented in SLC flash technology for non-volatile storage.
- Interface Parallel memory interface for conventional parallel access patterns.
- Clock Supports operation with a clock frequency of 83 MHz.
- Voltage Supply Operates from 2.7 V to 3.6 V, enabling use with standard 3.3 V systems.
- Package 152‑lead LBGA package (152‑LBGA, 14 × 18 mm) for compact board mounting.
- Operating Temperature Specified ambient operating temperature range: 0°C to 70°C (TA).
Unique Advantages
- High-density non-volatile storage: 512 Gbit capacity in a single device reduces the need for multiple memory components.
- SLC flash technology: SLC implementation provides the specific NAND flash characteristics associated with that technology.
- Parallel interface at 83 MHz: Parallel connectivity with a defined clock frequency supports predictable timing integration into existing parallel memory designs.
- Flexible supply voltage: 2.7 V to 3.6 V supply range supports systems designed around common 3.3 V rails.
- Compact LBGA package: 152‑LBGA (14 × 18 mm) minimizes board area while providing robust device mounting.
Why Choose IC FLASH 512GBIT PAR 152LBGA?
The MT29F512G08AUEBBH8-12:B positions itself as a high-density, SLC NAND flash device for designs that require parallel non-volatile memory with defined electrical and thermal limits. Its combination of 512 Gbit capacity, 83 MHz clock support, and 2.7 V–3.6 V supply range makes it suitable for systems that need substantial onboard storage within a 152‑LBGA footprint.
This device is appropriate for engineering teams and procurement focused on integrating a single-chip, high-capacity flash memory with explicit package, voltage, and operating temperature specifications for predictable system-level behavior.
For pricing, lead time, or to request a quote for MT29F512G08AUEBBH8-12:B, submit your request or contact sales to obtain availability and ordering information.
