MT29F512G08AUCBBH8-6IT:B TR

IC FLASH 512GBIT PAR 152LBGA
Part Description

IC FLASH 512GBIT PAR 152LBGA

Quantity 603 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package152-LBGA (14x18)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size512 GbitAccess TimeN/AGradeIndustrial
Clock Frequency166 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging152-LBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization64G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F512G08AUCBBH8-6IT:B TR – IC FLASH 512Gbit PAR 152-LBGA

The MT29F512G08AUCBBH8-6IT:B TR is a 512 Gbit non-volatile flash memory device based on NAND (SLC) technology with a parallel memory interface. It provides a 64G × 8 organization, a 166 MHz clock frequency and operates from 2.7 V to 3.6 V in a 152-LBGA (14×18) package.

This device is intended for systems that require high-density parallel NAND flash storage with defined temperature and voltage operating ranges, offering a compact LBGA package and standard parallel interface for board-level integration.

Key Features

  • Memory Type & Technology Non-volatile NAND flash using SLC technology, provided as a 512 Gbit memory.
  • Memory Organization Organized as 64G × 8 to support parallel data access and byte-wide operations.
  • Interface & Performance Parallel memory interface with a clock frequency of 166 MHz for synchronous operation.
  • Power Supports a supply voltage range of 2.7 V to 3.6 V, suitable for common 3 V system rails.
  • Package Supplied in a 152-LBGA package (14×18 mm) for compact board-area integration.
  • Operating Temperature Specified for operation from −40 °C to 85 °C (TA), covering extended temperature environments.

Typical Applications

  • Systems requiring parallel NAND flash: Integration where a parallel memory interface and high-density non-volatile storage are needed.
  • Board-level storage modules: Use in designs that require a 512 Gbit SLC NAND device in a compact LBGA footprint.
  • Embedded storage solutions: Applications that leverage the 64G × 8 organization and parallel access for data storage and retrieval.

Unique Advantages

  • High-density capacity: 512 Gbit memory enables large non-volatile storage in a single device, reducing component count.
  • SLC NAND architecture: SLC technology provides a straightforward NAND implementation consistent with the specified memory type.
  • Parallel interface compatibility: 64G × 8 organization and parallel interface support legacy and parallel-controller architectures.
  • Compact LBGA package: 152-LBGA (14×18) package delivers a small footprint for space-constrained PCBs.
  • Extended temperature range: −40 °C to 85 °C operating range supports deployment in environments with wide ambient temperature variations.
  • Flexible supply voltage: 2.7 V to 3.6 V operation aligns with common 3 V system power rails.

Why Choose MT29F512G08AUCBBH8-6IT:B TR?

The MT29F512G08AUCBBH8-6IT:B TR combines a 512 Gbit SLC NAND architecture with a parallel interface, a 166 MHz clock specification and a compact 152-LBGA package to address designs that require high-density, board-mounted non-volatile storage. Its voltage range and −40 °C to 85 °C operating temperature make it suitable for systems needing consistent electrical and thermal operating bounds.

Manufactured by Micron Technology Inc., this device is suited for engineers specifying parallel NAND flash for embedded storage modules, board-level memory solutions, and other applications where the listed electrical, mechanical and thermal specifications match system requirements.

Request a quote or contact sales to obtain pricing, lead-time and ordering information for the MT29F512G08AUCBBH8-6IT:B TR.

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