MT29F512G08AUCBBK8-6:B TR
| Part Description |
IC FLASH 512GBIT PARALLEL 166MHZ |
|---|---|
| Quantity | 517 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F512G08AUCBBK8-6:B TR – IC FLASH 512GBIT PARALLEL 166MHZ
The MT29F512G08AUCBBK8-6:B TR is a 512 Gbit parallel flash memory device from Micron Technology Inc. It implements NAND flash technology in a single-level cell (SLC) configuration and is organized as 64G × 8.
Designed for systems that require high-density non-volatile storage with a parallel memory interface, the device operates up to a 166 MHz clock frequency and supports a 2.7 V to 3.6 V supply range while operating across a 0°C to 70°C ambient temperature range.
Key Features
- Memory Technology Single-level cell (SLC) NAND flash providing non-volatile storage with a stated memory size of 512 Gbit.
- Organization & Capacity Organized as 64G × 8, delivering the device’s 512 Gbit capacity in an x8 memory configuration.
- Interface & Performance Parallel memory interface with a clock frequency specified at 166 MHz for synchronous operation.
- Power Supports a supply voltage range of 2.7 V to 3.6 V.
- Environmental Range Specified operating ambient temperature range of 0°C to 70°C.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- High-density storage systems — Provides 512 Gbit of non-volatile memory capacity for designs requiring large on-board data storage.
- Parallel-interface embedded systems — Fits applications that use a parallel memory bus and benefit from an x8 memory organization.
- Industrial and commercial equipment — Usable in devices operating within a 0°C to 70°C ambient range and a 2.7 V–3.6 V supply envelope.
Unique Advantages
- High storage density: 512 Gbit capacity enables consolidation of large datasets or firmware images on a single device.
- Parallel x8 organization: 64G × 8 organization supports byte-wide data transfers on parallel interfaces.
- 166 MHz clock capability: Specifies synchronous operation at up to 166 MHz for timing-driven designs.
- SLC NAND technology: Single-level cell architecture for straightforward single-bit-per-cell storage implementation.
- Flexible power range: Operates across a 2.7 V to 3.6 V supply range to match common system power rails.
- Defined operating temperature: Rated for use in 0°C to 70°C ambient environments.
Why Choose IC FLASH 512GBIT PARALLEL 166MHZ?
The MT29F512G08AUCBBK8-6:B TR positions itself as a high-density, parallel-interface NAND flash option from Micron Technology Inc., combining a 512 Gbit capacity with SLC NAND architecture and a 64G × 8 organization. Its 166 MHz clock rating and 2.7 V–3.6 V supply range make it suitable for designs that require defined timing and common voltage rails.
Engineers and procurement teams seeking a verified, manufacturer-backed flash memory device for embedded systems, parallel-bus architectures, or storage consolidation in environments within 0°C to 70°C will find this device aligned with those design constraints and operational parameters.
If you would like pricing, availability, or a formal quote for MT29F512G08AUCBBK8-6:B TR, please request a quote or contact sales for further assistance.
