MT29F512G08CECBBJ4-37:B
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 380 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 267 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08CECBBJ4-37:B – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08CECBBJ4-37:B is a 512 Gbit non-volatile NAND flash memory device from Micron Technology Inc. It uses NAND MLC technology and is organized as 64G × 8, delivered in a 132-VBGA (12×18) package.
This parallel-interface flash device operates with a supply voltage range of 2.7 V to 3.6 V and a clock frequency of 267 MHz, and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology NAND flash (MLC) non-volatile memory providing 512 Gbit raw storage capacity.
- Organization 64G × 8 organization for straightforward byte-wide data access and addressing.
- Interface & Performance Parallel memory interface with a specified clock frequency of 267 MHz.
- Supply Voltage Operates from 2.7 V to 3.6 V, supporting common 3.3 V system rails.
- Package 132-VBGA package (12×18 mm) for compact board-level integration.
- Operating Temperature Specified ambient range of 0°C to 70°C for standard commercial environments.
- Manufacturer Micron Technology Inc. device designation MT29F512G08CECBBJ4-37:B.
Unique Advantages
- High-density storage: 512 Gbit capacity supports large data storage requirements without external bank switching.
- Byte-wide organization: 64G × 8 organization simplifies system interfacing where parallel byte access is required.
- Standard voltage compatibility: 2.7 V to 3.6 V supply range aligns with common 3.3 V system architectures.
- Compact VBGA package: 132-VBGA (12×18) reduces PCB footprint while providing a robust BGA mounting option.
- Defined operating range: Specified 0°C to 70°C ambient rating for deployment in commercial temperature environments.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08CECBBJ4-37:B offers a high-density NAND MLC solution in a compact 132-VBGA package with a parallel interface and a 267 MHz clock specification. Its electrical and mechanical attributes—512 Gbit capacity, 64G × 8 organization, 2.7 V–3.6 V supply, and defined commercial temperature range—make it suitable for designs that require large, byte-oriented non-volatile storage from a single device.
Produced by Micron Technology Inc., this device is aimed at system designs that prioritize high capacity and board-level density while maintaining standard voltage compatibility and a parallel memory interface for integration into existing architectures.
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