MT29F512G08EBHBFJ4-R:B
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 505 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F512G08EBHBFJ4-R:B – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBHBFJ4-R:B is a 512 Gbit non-volatile parallel flash memory device based on NAND (TLC) technology. It is organized as 64G × 8 and provides high-density, parallel FLASH storage in a 132-VBGA (12×18) package.
Designed for systems that require dense parallel flash memory, the device operates from a 2.5 V to 3.6 V supply and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type: Non-Volatile FLASH – NAND (TLC) technology providing persistent storage without external power.
- Capacity & Organization: 512 Gbit memory organized as 64G × 8 to deliver high-density storage in a single device.
- Interface: Parallel memory interface for direct parallel access to FLASH data.
- Voltage Supply: Operates from 2.5 V to 3.6 V, accommodating systems with nominal 2.5 V or 3.3 V rails.
- Package: 132‑VBGA (12×18) package case providing a compact, board-mountable form factor.
- Operating Temperature: Specified for 0°C to 70°C (TA), suitable for standard commercial temperature environments.
- Manufacturer: Micron Technology Inc.
Unique Advantages
- High-density storage: 512 Gbit capacity enables significant data retention in a single device, reducing the number of components required for large storage demands.
- Parallel interface: Direct parallel connectivity simplifies integration into designs that use parallel memory buses.
- Flexible power range: 2.5 V to 3.6 V support allows compatibility with common system supply rails.
- Compact VBGA package: 132‑VBGA (12×18) footprint supports high-density board layouts while maintaining a standard package form.
- Commercial temperature rating: 0°C to 70°C specification aligns with typical commercial applications.
- Proven NAND FLASH technology: TLC NAND FLASH format provides non-volatile storage in a widely used memory architecture.
Why Choose MT29F512G08EBHBFJ4-R:B?
The MT29F512G08EBHBFJ4-R:B positions itself as a high-density parallel FLASH memory solution combining 512 Gbit capacity, TLC NAND technology, and a compact 132‑VBGA package. Its voltage flexibility (2.5 V–3.6 V) and parallel interface make it suitable for systems that require large, board-mounted non-volatile storage within a commercial temperature range.
This device is appropriate for designs prioritizing dense on-board FLASH capacity and straightforward parallel integration. With Micron Technology Inc. as the manufacturer, the part provides a defined set of electrical, packaging, and temperature specifications to support reliable BOM planning and system-level integration.
Request a quote or contact sales to obtain pricing, lead times, and availability for MT29F512G08EBHBFJ4-R:B.
