MT29F512G08EBHBFJ4-T:B TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 634 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBHBFJ4-T:B TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBHBFJ4-T:B TR is a 512 Gbit non-volatile NAND flash memory device using TLC technology, organized as 64G × 8 with a parallel interface. It is supplied in a 132-VBGA (12×18) package and is presented in a FLASH memory format.
Designed for systems requiring high-density parallel flash storage, the device operates across a 2.5 V to 3.6 V supply range and supports a commercial operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Type & Technology Non-volatile FLASH memory implemented as NAND (TLC) technology.
- Capacity & Organization 512 Gbit total capacity, organized as 64G × 8 for device-level addressing and mapping.
- Interface Parallel memory interface for connection to parallel memory controllers and system buses.
- Voltage Supply Operates from 2.5 V to 3.6 V, supporting a range of common system supply rails.
- Package 132-VBGA package (12×18 mm) providing a compact board-level footprint.
- Operating Temperature Commercial temperature rating of 0°C to 70°C (TA).
- Memory Format & Mounting FLASH memory format; mounting type listed as non-volatile.
Unique Advantages
- High-density storage 512 Gbit capacity enables significant non-volatile storage in a single device footprint.
- High-capacity organization 64G × 8 organization simplifies system addressing for large-memory applications.
- TLC NAND technology TLC implementation provides multi-level cell density in a standard flash form.
- Flexible power integration 2.5 V to 3.6 V operating range supports integration with a variety of system power rails.
- Compact VBGA package 132-VBGA (12×18) package minimizes board area while housing high memory capacity.
- Commercial temperature compatibility 0°C to 70°C rating aligns with typical commercial electronic applications.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08EBHBFJ4-T:B TR provides a straightforward, high-capacity parallel NAND flash solution with a compact 132-VBGA package and a broad supply voltage range. Its 512 Gbit density and 64G × 8 organization make it suitable for designs that require a single-device, high-density non-volatile memory option within commercial temperature limits.
Choose this device when you need a parallel FLASH memory component that combines high storage density, TLC NAND technology, and a compact package footprint for space-constrained system designs.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F512G08EBHBFJ4-T:B TR.
