MT29F512G08EBLCEJ4-R:C TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 554 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.6V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBLCEJ4-R:C TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBLCEJ4-R:C TR from Micron Technology Inc. is a 512 Gbit non-volatile FLASH memory device implemented as TLC NAND. It provides parallel memory access with a 64G × 8 organization for systems that require high-density parallel NAND storage.
Key device attributes include TLC NAND technology, a parallel memory interface, a 132‑VBGA (12×18) package, and an operating supply range of 2.6 V to 3.6 V. The device is specified for ambient operation from 0°C to 70°C.
Key Features
- Memory Type and Technology Non-volatile FLASH implemented as NAND (TLC) for high-density storage.
- Memory Capacity & Organization 512 Gbit total capacity with a 64G × 8 memory organization to support parallel byte-wide access.
- Interface Parallel memory interface for integration into systems that use parallel FLASH memory architectures.
- Voltage Supply Operates from 2.6 V to 3.6 V, allowing compatibility with common system supply rails in this range.
- Package 132‑VBGA package (12×18) providing a compact BGA footprint for board-level integration.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
- Memory Format & Mounting FLASH memory format with mounting type listed as Non-Volatile in the product data.
Unique Advantages
- High-density storage: 512 Gbit capacity supports large data and firmware storage requirements without multiple devices.
- Parallel access: Byte-wide parallel interface simplifies integration into systems designed for parallel FLASH devices.
- Standard supply compatibility: 2.6 V–3.6 V operating range matches common system rails for straightforward power integration.
- Compact BGA footprint: 132‑VBGA (12×18) package minimizes PCB area while providing BGA mounting advantages.
- Ambient operating range documented: 0°C to 70°C specification allows selection for applications operating within that temperature window.
- Single-device capacity: 64G × 8 organization enables parallel byte-wide access to 512 Gbit in one device instead of multiple smaller devices.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08EBLCEJ4-R:C TR positions itself as a high-density parallel NAND FLASH option from Micron Technology Inc., combining 512 Gbit capacity and TLC NAND technology in a 132‑VBGA package. Its documented voltage range and operating temperature make it suitable for designs that require substantial non-volatile storage in a compact BGA form factor.
This device is appropriate for engineers and procurement teams specifying parallel FLASH memory where single-device capacity, standard supply compatibility, and a defined ambient temperature range are required. Selecting this part supports designs that prioritize high-density NAND storage with a parallel interface and a compact board footprint.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F512G08EBLCEJ4-R:C TR.
