MT29F512G08EBLEEJ4-R:E
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 892 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 13 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.6V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT29F512G08EBLEEJ4-R:E – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBLEEJ4-R:E is a 512 Gbit non-volatile NAND flash memory device implemented in Triple-Level Cell (TLC) technology with a parallel memory interface. It is organized as 64G × 8 and is supplied in a 132-VBGA (12×18) package.
This device targets applications that require high-density parallel flash storage within a 0 °C to 70 °C operating range, offering a compact package and a 2.6 V to 3.6 V supply window suitable for a variety of embedded designs.
Key Features
- Memory Core 512 Gbit non-volatile FLASH implemented as NAND (TLC), organized as 64G × 8.
- Interface Parallel memory interface for systems designed to use parallel flash connectivity.
- Voltage Operates from 2.6 V to 3.6 V, enabling compatibility with common 3 V power domains.
- Package 132-VBGA package (12×18 mm) provides a compact footprint for board-level integration.
- Temperature Range Rated for operation from 0 °C to 70 °C.
- Memory Format & Mounting Flash memory format; product supplied as a surface-mount VBGA device as indicated by the 132-VBGA package.
Typical Applications
- Embedded storage systems — High-density parallel NAND flash for firmware, filesystem, or bulk storage in embedded devices that accept parallel flash.
- Legacy parallel-interface designs — Provides large-capacity NAND storage for systems using parallel memory interfaces.
- Data logging and instrumentation — Suitable for devices that require non-volatile storage within a 0 °C to 70 °C operating environment.
Unique Advantages
- High-density capacity: 512 Gbit capacity enables substantial on-board storage for data or code without external expansion.
- Parallel interface compatibility: Designed for systems that use parallel flash, simplifying integration into parallel-memory architectures.
- Compact VBGA package: 132-VBGA (12×18) package reduces board area while providing the connections needed for high-density memory.
- Wide supply voltage range: 2.6 V to 3.6 V operation supports common 3 V power rails used in embedded systems.
- Industry-standard temperature range: 0 °C to 70 °C rating aligns with a broad set of commercial applications.
- Clear memory organization: 64G × 8 organization simplifies addressing and capacity planning in system design.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08EBLEEJ4-R:E offers a straightforward, high-capacity NAND flash option in a compact 132-VBGA package, suitable for designs that require parallel flash memory and a 2.6 V–3.6 V supply. Its 64G × 8 organization and 512 Gbit density deliver significant on-board non-volatile storage within a commercial temperature profile.
This device is appropriate for engineers and procurement teams specifying high-density parallel NAND FLASH from Micron Technology Inc. when a compact package, defined operating range, and standard parallel interface are required for embedded or legacy-system designs.
If you would like pricing, lead-time, or to request a quote for MT29F512G08EBLEEJ4-R:E, please request a quote or contact sales to discuss availability and technical requirements.
