MT29F512G08EBLEEJ4-T:E TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 386 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.6V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT29F512G08EBLEEJ4-T:E TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBLEEJ4-T:E TR is a 512 Gbit non-volatile NAND flash memory device using TLC technology with a parallel memory interface. It provides a high-density flash storage option in a 132-VBGA (12x18) package for systems requiring parallel NAND flash memory with a 2.6 V to 3.6 V supply range.
This device is intended for designs that require compact, high-capacity NAND storage within an ambient operating range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile FLASH NAND (TLC) memory designed for persistent data storage.
- Capacity & Organization 512 Gbit total capacity with a memory organization of 64G x 8 for byte-wide access.
- Interface Parallel memory interface for integration with parallel NAND-compatible controllers and system architectures.
- Voltage Supply Operates from 2.6 V to 3.6 V, allowing use in systems within this supply range.
- Package 132-VBGA package (12x18) providing a compact BGA footprint for board-level integration.
- Operating Temperature Rated for an ambient operating range of 0°C to 70°C.
- Mounting Type Specified as Non-Volatile in the product mounting type field.
Typical Applications
- High-density storage modules Use where 512 Gbit of parallel NAND flash is required in a compact package.
- Embedded memory subsystems Integration into systems that utilize parallel flash interfaces and require persistent storage.
- Consumer and industrial devices Deployment in equipment operating within 0°C to 70°C that accept a 2.6 V–3.6 V supply and a 132-VBGA footprint.
Unique Advantages
- High storage density: 512 Gbit capacity enables large data storage in a single device, reducing the number of components required.
- Byte-wide organization: 64G x 8 memory organization supports byte-oriented access patterns for compatible system designs.
- Parallel interface compatibility: Parallel memory interface simplifies integration with parallel NAND-compatible controllers and legacy interfaces.
- Compact BGA package: 132-VBGA (12x18) package balances board space and package density for space-constrained designs.
- Flexible supply range: 2.6 V to 3.6 V operation accommodates common system power rails.
Why Choose MT29F512G08EBLEEJ4-T:E TR?
The MT29F512G08EBLEEJ4-T:E TR offers a straightforward, high-density NAND flash option combining 512 Gbit capacity, TLC NAND architecture, and a parallel interface in a compact 132-VBGA package. Its electrical and environmental specifications—2.6 V to 3.6 V supply and 0°C to 70°C operating range—make it suitable for designs that require substantial non-volatile storage in a small footprint.
This device is appropriate for engineers and procurement teams designing systems that prioritize storage density, parallel interface compatibility, and compact packaging, providing a single-device solution to reduce component count and simplify board-level integration.
Request a quote or contact sales to discuss availability, pricing, and lead time for the MT29F512G08EBLEEJ4-T:E TR.
