MT29F512G08EBLEEJ4-T:E

The MT29F512G08EBLEEJ4-T:E is a 512 Gbit non-volatile FLASH memory device using NAND (TLC) technology in a parallel memory organization. It delivers high-density, parallel-access storage in a compact 132-VBGA (12×18) package for designs that require large on-board NAND flash capacity.

This device targets applications and systems that need scalable non-volatile storage with a parallel interface, a wide supply voltage window, and a defined commercial temperature range.

Key Features

• Memory Type and Technology  Non-volatile NAND FLASH using TLC technology, providing 512 Gbit total capacity organized as 64G × 8.
• Capacity & Organization  512 Gbit memory size with a 64G × 8 memory organization for high-density storage integration.
• Interface  Parallel memory interface for direct parallel access to memory array.
• Power  Operates from a 2.6 V to 3.6 V supply range, enabling compatibility with common 3 V systems.
• Package  132-VBGA package (12×18 mm) providing a compact BGA footprint for board-level integration.
• Environmental Range  Specified operating temperature range of 0°C to 70°C for commercial-temperature applications.

Typical Applications

• Embedded storage systems  Provides high-density non-volatile storage where large on-board NAND capacity is required.
• Consumer electronics  Can be used in devices that require parallel NAND FLASH with a compact BGA package and standard voltage supply.
• Industrial equipment (commercial temperature)  Suitable for commercial-temperature-range systems needing 512 Gbit parallel FLASH in a small footprint.

Unique Advantages

• High-density storage: 512 Gbit capacity supports large data storage needs without increasing board count.
• Parallel interface: Parallel memory organization (64G × 8) allows straightforward integration into parallel-access designs.
• TLC NAND technology: Triple-level cell FLASH provides increased bit density per die for cost-effective capacity scaling.
• Wide supply range: 2.6 V to 3.6 V operation allows use with common 3 V power domains.
• Compact BGA footprint: 132-VBGA (12×18) package reduces PCB area for space-constrained designs.
• Defined operating range: 0°C to 70°C specification supports commercial-grade application deployment.

Why Choose MT29F512G08EBLEEJ4-T:E?

The MT29F512G08EBLEEJ4-T:E positions itself as a high-density parallel NAND FLASH solution that balances capacity, package compactness, and a practical supply-voltage range. Its 512 Gbit TLC architecture and 64G × 8 organization make it suitable for designs that require substantial non-volatile storage in a 132-VBGA footprint.

This device is appropriate for engineers and procurement teams specifying commercial-temperature, parallel-interface FLASH memory where board space and supply-voltage compatibility are key considerations. Its specification set supports scalable storage implementations without adding unverified claims or qualifications.

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