MT29F512G08EBLEEB47R3WC1-R
| Part Description |
IC FLASH 512GBIT DIE |
|---|---|
| Quantity | 738 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 13 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | N/A | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT29F512G08EBLEEB47R3WC1-R – IC FLASH 512Gbit Die
The MT29F512G08EBLEEB47R3WC1-R is a 512 Gbit NAND flash memory provided in a die package. It implements FLASH - NAND technology and is organized as 64G × 8, offering high-density non-volatile storage in die form.
This product is intended for designs that require a raw NAND flash die with a 512 Gbit capacity and 64G × 8 organization, enabling integration into custom packaging or multi-die assemblies.
Key Features
- Memory Technology The device uses FLASH - NAND technology as specified in the product data.
- Memory Capacity 512 Gbit total memory size, suitable for high-density storage implementations.
- Memory Organization Organized as 64G × 8, providing the specified internal arrangement for data storage.
- Package and Format Supplied as a die (Supplier Device Package: Die; Package/Case: Die) in FLASH memory format for integration into custom assemblies or advanced packaging flows.
Unique Advantages
- High-density storage: 512 Gbit capacity enables large non-volatile data storage within a single die.
- Defined organization: 64G × 8 arrangement provides a clear memory map for system design and integration.
- Die form factor: Delivered as a die to support custom packaging, multi-die stacking, or direct integration into advanced module designs.
- NAND flash technology: FLASH - NAND implementation aligns with designs requiring raw NAND die capabilities.
Why Choose IC FLASH 512GBIT DIE?
The MT29F512G08EBLEEB47R3WC1-R positions itself as a straightforward, high-density NAND flash die option where a 512 Gbit, 64G × 8 memory resource is required. Its die packaging and explicit NAND FLASH technology make it suitable for integration into custom modules or assemblies that need raw flash silicon for system-level packaging.
This part is appropriate for customers and designs that specify a die-level NAND solution with known capacity and organization, offering a clear, verifiable specification set for downstream integration and assembly processes.
Please request a quote or submit an inquiry to receive pricing, availability, and handling information for the MT29F512G08EBLEEB47R3WC1-R.
