MT29F512G08EBHBFJ4-R:B TR

The MT29F512G08EBHBFJ4-R:B TR is a 512 Gbit non-volatile NAND flash memory device implemented with TLC (triple-level cell) technology and presented in a 132‑VBGA (12×18) package. It provides parallel memory organization (64G × 8) and operates from a 2.5 V to 3.6 V supply.

This device is intended for system designs that require high-density parallel NAND flash storage in a compact BGA footprint, with an ambient operating temperature range of 0°C to 70°C.

Key Features

• Memory Type Non-volatile NAND flash (TLC) storage providing 512 Gbit capacity for persistent data retention.
• Memory Organization Organized as 64G × 8 to support byte-wide parallel access and straightforward system integration.
• Interface Parallel memory interface simplifies host connections where parallel flash protocols are required.
• Voltage Supply Operates across a 2.5 V to 3.6 V supply range, enabling compatibility with common system power rails.
• Package 132‑VBGA (12×18) ball grid array package for compact board mounting and high pin density.
• Operating Temperature Specified for 0°C to 70°C (TA) ambient operation for standard commercial temperature environments.

Typical Applications

• Embedded Storage Designs requiring 512 Gbit of parallel NAND flash in a small BGA package for onboard non-volatile storage.
• Consumer Electronics Devices that use parallel flash memory for firmware, system code, or media storage within the specified temperature and supply ranges.
• Networking and Storage Appliances Systems that integrate parallel NAND flash for local persistent data or boot storage where a 2.5 V–3.6 V supply is available.
• Industrial Control (Commercial Temperature) Control and instrumentation equipment operating within 0°C to 70°C that require high-density non-volatile memory in a compact footprint.

Unique Advantages

• High Density 512 Gbit Capacity: Provides significant onboard non-volatile storage to consolidate code and data in a single device.
• TLC NAND Technology: Triple-level cell architecture increases storage density within the given package envelope.
• Parallel Byte-Wide Organization: 64G × 8 organization enables straightforward byte-oriented access patterns for legacy or parallel host interfaces.
• Flexible Supply Range: 2.5 V to 3.6 V operation supports integration with common system power domains.
• Compact VBGA Package: 132‑VBGA (12×18) offers a small board footprint with high pin density for space-constrained designs.
• Commercial Temperature Coverage: Validated operation from 0°C to 70°C for standard commercial-grade applications.

Why Choose MT29F512G08EBHBFJ4-R:B TR?

The MT29F512G08EBHBFJ4-R:B TR positions itself as a high-density, parallel NAND flash memory option that combines TLC storage capacity with a compact 132‑VBGA package and a wide supply voltage window. Its byte-wide organization and standard commercial temperature range make it suitable for designs that require substantial non-volatile storage in a space-efficient form factor.

This device is well suited to engineers and procurement teams specifying parallel NAND flash for embedded storage, consumer devices, or networking equipment where the provided electrical, temperature, and packaging specifications align with system requirements.

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