MT29F64G08AEAAAC5-ITZ:A TR

IC FLASH 64GBIT PARALLEL 52VLGA
Part Description

IC FLASH 64GBIT PARALLEL 52VLGA

Quantity 9 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time28 Weeks
Datasheet

Specifications & Environmental

Device Package52-VLGA (18x14)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging52-VLGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08AEAAAC5-ITZ:A TR – 64 Gbit Parallel NAND Flash, 52-VLGA

The MT29F64G08AEAAAC5-ITZ:A TR is a 64 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It is organized as 8G × 8 and provides a parallel memory interface in a compact 52‑VLGA (18×14) package.

Designed for applications that require high-density, non-volatile storage, this device supports a 2.7 V to 3.6 V supply range and an operating temperature range of -40°C to 85°C, offering design flexibility across a range of ambient conditions.

Key Features

  • Memory Type Non-volatile NAND flash memory providing 64 Gbit of storage capacity, organized as 8G × 8.
  • Interface Parallel memory interface for direct parallel access to the device.
  • Voltage Supply Operates from 2.7 V to 3.6 V, enabling use with common 3 V system power rails.
  • Operating Temperature Specified for -40°C to 85°C (TA) to support a wide ambient range.
  • Package 52‑VLGA (18×14) package, providing a compact footprint for board-level integration.
  • Manufacturer Micron Technology Inc. device identification MT29F64G08AEAAAC5-ITZ:A TR.

Typical Applications

  • Embedded Memory Systems High-density non-volatile storage where 64 Gbit of NAND flash is required.
  • System Storage Modules Parallel NAND memory integration for designs requiring direct parallel memory access.
  • Industrial Electronics Applications operating across -40°C to 85°C that need robust non-volatile storage with standard 3 V supply compatibility.

Unique Advantages

  • High Storage Density: 64 Gbit capacity in an 8G × 8 organization delivers substantial on-board non-volatile storage.
  • Parallel Interface: Parallel memory interface enables straightforward access patterns for systems designed around parallel memory bus architectures.
  • Wide Supply Range: 2.7 V to 3.6 V operation supports common 3 V system rails and offers voltage flexibility.
  • Extended Temperature Range: Rated for -40°C to 85°C to address a broad set of ambient operating conditions.
  • Compact Package: 52‑VLGA (18×14) package helps minimize board area while providing required I/O connectivity.

Why Choose IC FLASH 64GBIT PARALLEL 52VLGA?

The MT29F64G08AEAAAC5-ITZ:A TR positions itself as a high-capacity, parallel NAND flash option focused on delivering large non-volatile storage in a compact 52‑VLGA package. Its 8G × 8 organization, wide supply voltage range, and extended operating temperature make it suitable for designs that require reliable on-board memory with parallel access.

This device is well suited for engineering teams and procurement seeking a Micron-sourced 64 Gbit parallel NAND solution that balances density, package compactness, and operating flexibility for long-term deployment.

Request a quote or submit an inquiry to receive pricing and availability information for the MT29F64G08AEAAAC5-ITZ:A TR.

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