MT29F64G08AECABJ1-10Z:A TR

The MT29F64G08AECABJ1-10Z:A TR is a 64 Gbit parallel NAND flash memory device in a 132-ball VBGA (12×18) package. It implements Single-Level Cell (SLC) NAND architecture and supports both asynchronous and synchronous I/O operation modes.

Designed for systems that require non-volatile parallel flash storage, the device provides large capacity, defined endurance and predictable timing options. Key electrical and mechanical attributes include a 2.7–3.6 V supply range, commercial operating temperature of 0 °C to 70 °C, and an 8G × 8 memory organization.

Key Features

• Memory and Organization — 64 Gbit total capacity organized as 8G × 8 with a page size (x8) of 8,640 bytes (8,192 + 448) and block size of 128 pages.
• SLC NAND Technology — Single-level cell architecture with documented endurance of 60,000 program/erase cycles.
• Synchronous and Asynchronous I/O — Supports synchronous timing modes (up to timing mode 5) and asynchronous timing modes (up to timing mode 5); data strobe (DQS) signals available for synchronous data alignment.
• High Throughput Options — Synchronous read/write throughput per pin up to 200 MT/s; asynchronous read/write throughput per pin up to 50 MT/s; clocking characteristics include DDR operation with a 10 ns clock rate reference.
• Performance Metrics — Typical array performance values: read page 35 µs (max), program page ~350 µs (typ), and erase block ~1.5 ms (typ).
• Command and Feature Set — ONFI 2.2-compliant command set with advanced features such as program cache, read cache (sequential and random), multi-plane and multi-LUN operations, copyback, read unique ID, and OTP mode.
• Power and Temperature — VCC operating range 2.7–3.6 V with commercial temperature grade 0 °C to +70 °C (TA).
• Package — 132-ball very thin BGA (VBGA) package, footprint 12 × 18.

Typical Applications

• Parallel NAND storage systems — Use as non-volatile parallel flash for firmware, persistent data, and mass storage in designs requiring a 64 Gbit SLC device.
• Embedded storage platforms — Integration where a VBGA package and defined commercial temperature range align with board-level constraints and environmental requirements.
• High-reliability memory subsystems — Applicable where SLC endurance (60,000 P/E cycles) and documented array performance are required for lifecycle planning.

Unique Advantages

• High-density SLC capacity: 64 Gbit in a single device provides significant non-volatile storage in a compact VBGA footprint.
• Flexible I/O timing: Support for both asynchronous and synchronous ONFI 2.2-compliant interfaces enables designers to choose throughput and timing modes that match system requirements.
• Documented endurance and retention: 60,000 program/erase cycles and JESD47G-compliant data retention references provide quantifiable reliability metrics for long-term use.
• Defined electrical envelope: 2.7–3.6 V supply range and specified commercial temperature range simplify power and thermal design choices.
• Advanced NAND features: Program/read caching, multi-plane commands, and copyback functions help optimize throughput and system-level flash management.

Why Choose MT29F64G08AECABJ1-10Z:A TR?

The MT29F64G08AECABJ1-10Z:A TR combines a high-density 64 Gbit SLC NAND organization with a compact 132-ball VBGA package and flexible synchronous/asynchronous interfaces. Its documented endurance, defined timing options and ONFI 2.2 feature set make it suitable for designs that require predictable performance and robust flash-management capabilities.

This device is appropriate for engineering teams specifying parallel NAND storage with clear electrical and thermal constraints, and for applications that rely on documented program/erase endurance and array performance numbers for lifecycle planning.

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