MT29F64G08AECDBJ4-6IT:D TR
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 741 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECDBJ4-6IT:D TR – 64 Gbit Parallel NAND Flash, 132-VBGA
The MT29F64G08AECDBJ4-6IT:D TR is a 64 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements FLASH NAND architecture with an 8G × 8 memory organization and a parallel memory interface.
Designed for systems requiring high-density parallel flash storage, the device offers a 166 MHz clock capability, a wide supply range of 2.7 V to 3.6 V, and an operating temperature range of −40°C to 85°C. The device is supplied in a 132-VBGA (12 × 18) package for compact board-level integration.
Key Features
- Memory Type: Non-volatile FLASH (NAND) memory providing persistent storage without power.
- Density and Organization: 64 Gbit capacity organized as 8G × 8 for high-density embedded storage.
- Interface: Parallel memory interface suitable for systems designed around parallel NAND connectivity.
- Performance: 166 MHz clock frequency specified for device operation.
- Voltage Supply: Operates from 2.7 V to 3.6 V, supporting standard 3.0 V system power domains.
- Package: 132-VBGA package (12 × 18 mm) for surface-mount integration and compact board footprint.
- Temperature Range: Rated for −40°C to 85°C ambient operation.
Typical Applications
- Embedded systems: Provides onboard non-volatile storage in systems that require parallel NAND flash memory.
- Consumer electronics: Suitable for devices that need large-capacity parallel flash in a compact VBGA package.
- Industrial equipment: Supports deployment in equipment operating across −40°C to 85°C requiring robust flash memory capacity.
Unique Advantages
- High density 64 Gbit capacity: Enables large data or firmware storage within a single device footprint.
- Parallel interface: Provides compatibility with systems designed for parallel NAND connectivity and timing.
- Wide voltage range (2.7 V–3.6 V): Compatible with common 3.0 V power rails and tolerant to supply variation within the specified range.
- Industrial temperature rating: Supports operation from −40°C to 85°C for temperature-sensitive deployments.
- Compact 132-VBGA package: Small 12 × 18 mm VBGA package for dense board-level integration.
Why Choose MT29F64G08AECDBJ4-6IT:D TR?
The MT29F64G08AECDBJ4-6IT:D TR combines 64 Gbit NAND flash density with a parallel interface, a specified 166 MHz clock, and a wide supply range of 2.7 V to 3.6 V. Its 132-VBGA (12 × 18) package and −40°C to 85°C operating range make it suitable for compact, temperature-demanding designs that require non-volatile parallel memory.
Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying high-capacity parallel NAND flash where defined electrical, thermal, and package characteristics are required for system integration.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F64G08AECDBJ4-6IT:D TR.
