MT29F64G08AECDBJ4-6ITR:D

The MT29F64G08AECDBJ4-6ITR:D is a 64 Gbit parallel NAND flash memory device from Micron Technology Inc. It is a non-volatile FLASH memory organized as 8G x 8 and designed for use where parallel flash storage is required.

With a parallel memory interface, a 166 MHz clock frequency, a 2.7 V–3.6 V supply range and an operating temperature range of −40°C to 85°C, this device targets systems that need compact, high-density NAND storage in a 132-VBGA (12×18) package.

Key Features

• Memory Type & Technology  Non-volatile FLASH (NAND) memory providing persistent storage suitable for code and data retention.
• Capacity & Organization  64 Gbit capacity organized as 8G × 8 for byte-wide parallel access.
• Interface & Performance  Parallel memory interface with a clock frequency of 166 MHz to support typical parallel NAND access patterns.
• Power  Wide supply range of 2.7 V to 3.6 V to accommodate common system power rails.
• Package  132‑VBGA (12×18) ball grid array package that minimizes board area for high-density designs.
• Temperature Range  Rated for operation from −40°C to 85°C, allowing deployment across a broad range of ambient conditions.
• Manufacturer  Micron Technology Inc. part number MT29F64G08AECDBJ4-6ITR:D.

Typical Applications

• Embedded Systems  Provides parallel NAND storage for firmware, application code and data in microcontroller- and processor-based systems.
• Firmware and Boot Media  Used as non-volatile storage for boot code and system firmware where parallel flash is required.
• Data Logging and Buffering  Suitable for local data capture and buffering in systems that need substantial on-board NAND capacity.
• Systems Operating Across Wide Temperatures  Applicable where operation between −40°C and 85°C is needed, due to its specified operating temperature range.

Unique Advantages

• High-density storage: 64 Gbit capacity allows consolidation of code and data storage into a single device, reducing BOM count.
• Parallel interface for straightforward integration: 8-bit parallel organization and a 166 MHz clock simplify integration with parallel memory controllers.
• Flexible power compatibility: 2.7 V to 3.6 V supply range supports common system power rails and eases board-level power design.
• Compact BGA footprint: 132‑VBGA (12×18) package saves PCB area in space-constrained designs.
• Extended temperature operation: Specified −40°C to 85°C operation supports deployment in varied thermal environments.
• Produced by a recognized manufacturer: Supplied by Micron Technology Inc., providing clear manufacturer identification for sourcing and planning.

Why Choose IC FLASH 64GBIT PAR 132VBGA?

The MT29F64G08AECDBJ4-6ITR:D delivers high-density, parallel NAND flash storage in a compact 132‑VBGA package with a wide supply voltage range and extended operating temperature. Its 8G × 8 organization and 166 MHz clock make it suitable for systems that require byte-wide parallel access to non-volatile memory.

This device is well suited to designs that need consolidated on-board flash capacity with straightforward parallel integration and predictable electrical and thermal operating ranges. Engineers specifying parallel NAND storage can rely on the clear part identity and physical package dimensions for board-level planning and sourcing.

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