MT29F64G08AFAAAWP-IT:A TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 356 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AFAAAWP-IT:A TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08AFAAAWP-IT:A TR is a 64 Gbit non-volatile FLASH NAND memory device with a parallel memory interface. It provides high-density storage in a 48-TSOP I (48-TFSOP) package and operates from a 2.7 V to 3.6 V supply.
Designed for systems that require parallel FLASH memory, the device supports operation across a temperature range of −40°C to 85°C and is organized as 8G × 8.
Key Features
- Memory Type & Technology Non-volatile FLASH NAND memory, offering persistent storage without continuous power.
- Density & Organization 64 Gbit capacity arranged as 8G × 8, providing large storage density in a compact footprint.
- Interface Parallel memory interface for systems designed to communicate with parallel FLASH devices.
- Voltage Supply Operates across a 2.7 V to 3.6 V supply range, compatible with common system power rails.
- Package Supplied in a 48-TFSOP (48-TSOP I) package with an 18.40 mm width (0.724"), facilitating standard board-level mounting.
- Operating Temperature Specified for operation from −40°C to 85°C (TA), covering a wide ambient temperature span.
Typical Applications
- Embedded Systems — Provides 64 Gbit non-volatile storage via a parallel interface for embedded platforms requiring high-density FLASH.
- Consumer Electronics — Fits designs that need compact, high-capacity NAND FLASH in a 48-TSOP package and standard 3 V supply operation.
- Industrial Equipment — Supports deployments requiring operation across −40°C to 85°C while maintaining parallel FLASH connectivity.
Unique Advantages
- High-density storage: 64 Gbit capacity in an 8G × 8 organization reduces external memory count for large-data applications.
- Parallel interface compatibility: Parallel memory interface aligns with systems designed for parallel FLASH devices, simplifying integration.
- Standard voltage range: 2.7 V to 3.6 V operation matches common system rails for straightforward power management.
- Compact, industry-standard package: 48-TFSOP (48-TSOP I) packaging offers a familiar footprint for board-level implementation.
- Wide operating temperature: −40°C to 85°C rating enables use across broad ambient conditions.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08AFAAAWP-IT:A TR positions itself as a high-density, parallel NAND FLASH option that balances capacity, package footprint, and supply-voltage compatibility. Its 64 Gbit density, 8G × 8 organization, and 48-TSOP package make it suitable for designs that require substantial non-volatile storage in a compact form factor.
With an operating range of −40°C to 85°C and a 2.7 V to 3.6 V supply envelope, the device offers predictable integration characteristics for a variety of system environments where parallel FLASH memory is required.
Request a quote or submit an inquiry for pricing and availability to get started with the MT29F64G08AFAAAWP-IT:A TR.
