MT29F64G08AFAAAWP-Z:A TR

The MT29F64G08AFAAAWP-Z:A TR is a 64 Gbit non-volatile NAND flash memory device organized as 8G × 8. It provides parallel flash storage in a 48‑TSOP I package and is specified for operation from 2.7 V to 3.6 V and an ambient temperature range of 0°C to 70°C.

This device is intended for designs that require high-density parallel NAND flash in a compact TSOP footprint, offering a defined voltage range and operating temperature for board-level integration.

Key Features

• Memory Type & Technology Non-volatile NAND flash memory; memory format listed as FLASH using FLASH - NAND technology.
• Capacity & Organization 64 Gbit total capacity, organized as 8G × 8 to support byte-wide parallel access patterns.
• Interface Parallel memory interface suitable for systems requiring parallel flash connectivity.
• Supply Voltage Operates from 2.7 V to 3.6 V, enabling use with common 3.3 V system rails.
• Package 48‑TFSOP / 48‑TSOP I package with 0.724" (18.40 mm) width, supporting board-level placement in TSOP I form factor.
• Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Embedded storage modules Use as high-density non-volatile storage where parallel NAND flash is required on the module or carrier board.
• Board-level flash deployment Suitable for direct placement on PCBs that accept 48‑TSOP I devices for program/data storage.
• 3.3 V system integration Suited to systems operating within the 2.7 V–3.6 V supply range requiring parallel flash memory.
• Temperature-controlled applications Applicable in designs operating within the specified ambient range of 0°C to 70°C.

Unique Advantages

• High-density storage: 64 Gbit capacity delivers substantial non-volatile storage in a single device footprint.
• Byte-wide organization (8G × 8): Facilitates parallel byte-oriented access patterns and straightforward system interfacing.
• Compact TSOP I package: 48‑TSOP I (0.724", 18.40 mm) package provides a compact board-level option for space-constrained designs.
• Flexible supply range: 2.7 V–3.6 V operation aligns with common 3.3 V system rails for simplified power design.
• Defined operating temperature: Specified 0°C to 70°C ambient range clarifies suitability for temperature-controlled environments.

Why Choose MT29F64G08AFAAAWP-Z:A TR?

The MT29F64G08AFAAAWP-Z:A TR combines a high 64 Gbit NAND flash capacity with a standard parallel interface and a compact 48‑TSOP I package, offering a practical solution for designs that need board-mounted non-volatile storage within a 2.7 V–3.6 V power envelope and 0°C–70°C ambient range. Its 8G × 8 organization and TSOP form factor make it straightforward to integrate into systems that rely on parallel flash memory.

This device is well suited to engineers and procurement teams specifying standard parallel NAND flash for embedded storage modules and board-level implementations where the stated capacity, interface, package, voltage range, and operating temperature align with system requirements.

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