MT29F64G08AFAAAWP-Z:A

The MT29F64G08AFAAAWP-Z:A is a 64 Gbit non-volatile NAND flash memory device provided by Micron Technology Inc. It implements flash NAND memory organized as 8G × 8 with a parallel memory interface, delivering high-density storage in a compact surface-mount package.

Engineered for designs that require parallel NAND flash storage, this device combines a 64 Gbit capacity, 2.7–3.6 V supply range and a commercial operating temperature range of 0°C–70°C to support a variety of embedded storage implementations where a 48-TSOP I package is required.

Key Features

• Memory Technology  NAND flash non-volatile memory organized as 8G × 8, providing 64 Gbit of storage capacity.
• Memory Format & Capacity  64 Gbit FLASH memory suitable for high-density data and code storage in embedded systems.
• Interface  Parallel memory interface for designs that require parallel flash access and legacy parallel flash support.
• Supply Voltage  Wide supply range of 2.7 V to 3.6 V to accommodate common 3 V system rails.
• Package  48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) surface-mount package for compact board-level integration.
• Operating Temperature  Commercial temperature rating of 0°C to 70°C (TA), suitable for standard commercial electronic applications.

Typical Applications

• Embedded Storage  Use as high-density non-volatile storage for embedded systems requiring parallel NAND flash.
• Firmware and Code Storage  Store firmware, boot code, or lookup tables in designs that accept a 48-TSOP I package and 3 V supply rails.
• Legacy Parallel Flash Designs  Drop-in option for systems designed around parallel flash interfaces and 8-bit memory organization.

Unique Advantages

• High Density in Compact Package: 64 Gbit capacity in a 48-TSOP I package allows significant storage without large board area impact.
• Parallel Interface Compatibility: Parallel memory interface supports designs that rely on parallel flash access and established memory architectures.
• Wide Supply Range: 2.7 V to 3.6 V supply support enables compatibility with common 3 V system power domains.
• Commercial Temperature Rating: 0°C–70°C operating range aligns with standard commercial electronics operating environments.
• Clear Memory Organization: 8G × 8 organization provides predictable memory addressing for firmware and data mapping.

Why Choose MT29F64G08AFAAAWP-Z:A?

The MT29F64G08AFAAAWP-Z:A positions itself as a straightforward, high-density parallel NAND flash option for systems that require 64 Gbit of non-volatile storage in a 48-TSOP I package. Its 8G × 8 organization, parallel interface, and 2.7–3.6 V supply range make it suitable for designs that need compact board-level flash integration and compatibility with common 3 V rails.

This device is appropriate for engineers and procurement teams targeting embedded storage, firmware storage, or migration paths for parallel flash architectures, offering a combination of capacity, package compactness, and standard commercial temperature operation to support medium- to high-density storage requirements.

To request a quote or submit an inquiry for availability and pricing of the MT29F64G08AFAAAWP-Z:A, please reach out to our sales team or submit a quote request through your usual procurement channels.