MT29F64G08AECDBJ4-6ITR:D TR
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,171 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECDBJ4-6ITR:D TR – IC FLASH 64GBIT PAR 132VBGA
The MT29F64G08AECDBJ4-6ITR:D TR is a 64 Gbit parallel NAND FLASH memory device from Micron Technology Inc. It implements NAND flash technology with an 8G x 8 memory organization and a parallel memory interface.
Designed for systems that require non-volatile parallel memory, the device offers a 2.7 V to 3.6 V supply range, a 166 MHz clock frequency, and a 132-VBGA (12×18) package, with an operating temperature range of −40°C to 85°C.
Key Features
- Memory Type Non-volatile FLASH NAND memory suitable for persistent data storage.
- Density & Organization 64 Gbit capacity organized as 8G × 8 for parallel data access.
- Interface & Performance Parallel memory interface with a specified clock frequency of 166 MHz.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common 3.0 V system rails.
- Package Supplied in a 132‑VBGA (12×18) package for high‑density board integration.
- Temperature Range Rated for operation from −40°C to 85°C (TA).
Typical Applications
- Parallel NAND storage Used where parallel FLASH memory is required for non-volatile data storage leveraging 64 Gbit capacity and an 8G × 8 organization.
- Embedded systems Suitable for embedded designs that require a 132‑VBGA packaged parallel NAND device with a 2.7 V–3.6 V supply and extended temperature support.
- Board-level memory integration Fits designs that need a high-density BGA package (12×18) and a defined 166 MHz clocked parallel interface.
Unique Advantages
- High-capacity NAND Provides 64 Gbit of non-volatile storage in an 8G × 8 organization for substantial on-board data capacity.
- Parallel interface with defined clock Parallel memory interface specified at 166 MHz enables predictable timing integration.
- Wide supply voltage support Operates across 2.7 V to 3.6 V, allowing compatibility with common 3.0 V system rails.
- Compact BGA package 132‑VBGA (12×18) packaging enables dense PCB integration while maintaining BGA reliability attributes.
- Extended operating temperature Rated from −40°C to 85°C for use in temperature‑variable environments.
Why Choose IC FLASH 64GBIT PAR 132VBGA?
The MT29F64G08AECDBJ4-6ITR:D TR positions itself as a high-density parallel NAND FLASH memory option that balances capacity, interface clarity, and board-level integration. Its 64 Gbit density, 8G × 8 organization, and 132‑VBGA package make it suitable for designs requiring compact, non-volatile parallel memory with defined electrical and thermal envelopes.
Engineers targeting systems with 3.0 V rails, a need for a 166 MHz parallel clock domain, and operation across −40°C to 85°C will find the device aligns with those requirements while providing a clear specification set from Micron Technology Inc.
Request a quote or submit a pricing inquiry to receive availability and lead‑time information for the MT29F64G08AECDBJ4-6ITR:D TR.
