MT48LC16M8A2TG-7E:G TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 926 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 133 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 2 (1 Year) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC16M8A2TG-7E:G TR – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC16M8A2TG-7E:G TR is a 128 Mbit volatile SDRAM configured as 16M × 8 with a parallel memory interface in a 54-pin TSOP II (0.400", 10.16 mm width) package. It targets systems requiring synchronous DRAM with PC100/PC133-compliant timing and common SDRAM features such as internal pipelining, programmable burst lengths and banked operation.
Key value propositions include a compact TSOP II footprint, support for 133 MHz clocking, and industry-standard SDRAM feature set for system memory and buffering in embedded and legacy parallel-memory applications.
Key Features
- Memory Core 128 Mbit SDRAM organized as 16M × 8 with four internal banks for concurrent operations and improved throughput.
- Performance & timing PC100- and PC133-compliant; clock frequency up to 133 MHz and an access time specified at 5.4 ns. Supports CAS latencies and standard SDRAM timing options (datasheet timing grades available).
- Burst and access modes Programmable burst lengths (1, 2, 4, 8 or full page) with internal pipelined operation and the ability to change column address every clock cycle.
- Refresh and self-refresh Supports Auto Refresh and standard self-refresh modes with 4096-cycle refresh schemes; includes auto precharge and concurrent auto refresh modes.
- Signals and I/O LVTTL-compatible inputs and outputs; fully synchronous operation with all signals registered on the positive clock edge.
- Power Single 3.3 V ±0.3 V supply (listed supply range 3.0 V to 3.6 V) for standard SDRAM system integration.
- Package & temperature 54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C as specified.
Typical Applications
- System memory for legacy and embedded platforms Provides a compact 128 Mbit parallel SDRAM option in a 54-TSOP II package for designs requiring synchronous DRAM.
- Frame buffer and graphics buffering Parallel SDRAM organization and programmable burst operation support sequential read/write bursts used in buffering applications.
- Data buffering in communications equipment Banked SDRAM architecture and pipelined operation help maintain throughput for temporary data storage and packet buffering.
Unique Advantages
- Standard SDRAM feature set: PC100/PC133 compliance, programmable burst lengths and internal banks provide familiar operation and timing options for system designers.
- Compact TSOP II package: 54-pin TSOP II (0.400" / 10.16 mm width) enables dense PCB layouts where board area is limited.
- Synchronous, pipelined operation: All signals registered on the positive clock edge and internal pipelining allow column address changes every cycle to support continuous data streams.
- Flexible power range: Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), matching common SDRAM power rails for straightforward integration.
- Commercial temperature support: Specified for 0°C to +70°C operation for standard commercial applications.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The MT48LC16M8A2TG-7E:G TR delivers a proven SDRAM architecture—16M × 8 organization, banked memory, programmable burst lengths, and PC100/PC133 timing—in a compact 54-TSOP II package suitable for space-constrained designs. Its synchronous, pipelined operation and standard voltage range simplify system integration where parallel SDRAM is required.
This device is appropriate for designers and procurement teams specifying commercial-grade 128 Mbit SDRAM for applications needing a parallel interface, standard SDRAM features and a small-footprint package. The datasheet-defined timing grades and refresh options support predictable behavior across compliant system designs.
Request a quote or submit an inquiry for pricing and availability to evaluate the MT48LC16M8A2TG-7E:G TR for your next design.