MT48LC16M8A2TG-7E:G TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 926 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page14 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 8
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of MT48LC16M8A2TG-7E:G TR – IC DRAM 128MBIT PAR 54TSOP II

The MT48LC16M8A2TG-7E:G TR is a 128 Mbit volatile SDRAM configured as 16M × 8 with a parallel memory interface in a 54-pin TSOP II (0.400", 10.16 mm width) package. It targets systems requiring synchronous DRAM with PC100/PC133-compliant timing and common SDRAM features such as internal pipelining, programmable burst lengths and banked operation.

Key value propositions include a compact TSOP II footprint, support for 133 MHz clocking, and industry-standard SDRAM feature set for system memory and buffering in embedded and legacy parallel-memory applications.

Key Features

  • Memory Core  128 Mbit SDRAM organized as 16M × 8 with four internal banks for concurrent operations and improved throughput.
  • Performance & timing  PC100- and PC133-compliant; clock frequency up to 133 MHz and an access time specified at 5.4 ns. Supports CAS latencies and standard SDRAM timing options (datasheet timing grades available).
  • Burst and access modes  Programmable burst lengths (1, 2, 4, 8 or full page) with internal pipelined operation and the ability to change column address every clock cycle.
  • Refresh and self-refresh  Supports Auto Refresh and standard self-refresh modes with 4096-cycle refresh schemes; includes auto precharge and concurrent auto refresh modes.
  • Signals and I/O  LVTTL-compatible inputs and outputs; fully synchronous operation with all signals registered on the positive clock edge.
  • Power  Single 3.3 V ±0.3 V supply (listed supply range 3.0 V to 3.6 V) for standard SDRAM system integration.
  • Package & temperature  54-pin TSOP II (0.400", 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C as specified.

Typical Applications

  • System memory for legacy and embedded platforms  Provides a compact 128 Mbit parallel SDRAM option in a 54-TSOP II package for designs requiring synchronous DRAM.
  • Frame buffer and graphics buffering  Parallel SDRAM organization and programmable burst operation support sequential read/write bursts used in buffering applications.
  • Data buffering in communications equipment  Banked SDRAM architecture and pipelined operation help maintain throughput for temporary data storage and packet buffering.

Unique Advantages

  • Standard SDRAM feature set:  PC100/PC133 compliance, programmable burst lengths and internal banks provide familiar operation and timing options for system designers.
  • Compact TSOP II package:  54-pin TSOP II (0.400" / 10.16 mm width) enables dense PCB layouts where board area is limited.
  • Synchronous, pipelined operation:  All signals registered on the positive clock edge and internal pipelining allow column address changes every cycle to support continuous data streams.
  • Flexible power range:  Operates from 3.0 V to 3.6 V (3.3 V ±0.3 V), matching common SDRAM power rails for straightforward integration.
  • Commercial temperature support:  Specified for 0°C to +70°C operation for standard commercial applications.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC16M8A2TG-7E:G TR delivers a proven SDRAM architecture—16M × 8 organization, banked memory, programmable burst lengths, and PC100/PC133 timing—in a compact 54-TSOP II package suitable for space-constrained designs. Its synchronous, pipelined operation and standard voltage range simplify system integration where parallel SDRAM is required.

This device is appropriate for designers and procurement teams specifying commercial-grade 128 Mbit SDRAM for applications needing a parallel interface, standard SDRAM features and a small-footprint package. The datasheet-defined timing grades and refresh options support predictable behavior across compliant system designs.

Request a quote or submit an inquiry for pricing and availability to evaluate the MT48LC16M8A2TG-7E:G TR for your next design.

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