MT48LC2M32B2B5-6A AAT:J TR

The MT48LC2M32B2B5-6A AAT:J TR is a 64 Mbit (2M x 32) volatile SDRAM device in a 90-ball VFBGA package. It implements fully synchronous SDR SDRAM architecture with a parallel memory interface and internal banked organization for pipelined operation.

Designed and manufactured by Micron Technology, this device targets applications that require automotive-grade memory performance and reliability, offering a 3.3 V supply range, 167 MHz operation, and AEC-Q100 qualification for high-temperature automotive environments.

Key Features

• Core / Architecture Fully synchronous SDR SDRAM with internal pipelined operation and four internal banks, enabling column address changes every clock cycle.
• Memory Organization 2M × 32 organization (512K × 32 × 4 banks) providing a total memory size of 64 Mbit in a single device.
• Performance Clock frequency: 167 MHz; access time: 5.4 ns; supports CAS latencies (CL) and timing options documented for this speed grade.
• Burst & Refresh Programmable burst lengths (1, 2, 4, 8, full page), auto precharge and auto refresh modes, and refresh schemes documented for 4K-cycle refresh intervals.
• Power Single supply operation at 3.3 V ±0.3 V (3.0 V to 3.6 V) for straightforward integration with 3.3 V systems.
• Package 90-ball VFBGA (8 mm × 13 mm) compact footprint suitable for space-constrained board designs; supplier device package listed as 90-VFBGA (8×13).
• Temperature & Qualification Operating temperature range −40°C to +105°C (TA) and AEC‑Q100 qualification for automotive-grade reliability.
• Timing & Cycle Write cycle time (word page) of 12 ns and documented timing parameters for the -6A speed grade at 167 MHz.

Typical Applications

• Automotive systems AEC‑Q100 qualification and −40°C to +105°C operating range make the device suitable for automotive electronic modules that require SDRAM memory.
• Compact embedded platforms 90-ball VFBGA packaging and a 2M × 32 organization provide a small-footprint memory option for space-constrained embedded designs.
• Parallel SDRAM designs Parallel memory interface and programmable burst lengths fit legacy and dedicated parallel SDRAM architectures needing deterministic timing.

Unique Advantages

• Automotive-qualified reliability: AEC‑Q100 qualification and extended operating temperature (−40°C to +105°C) support deployment in automotive environments.
• Deterministic timing: Documented access time of 5.4 ns, 12 ns write-cycle time, and speed-grade timing tables enable predictable memory timing for system designers.
• Flexible burst and bank architecture: Programmable burst lengths and four internal banks allow efficient data streaming and row access hiding for sustained throughput.
• Single-supply integration: Operates from a single 3.3 V ±0.3 V supply, simplifying power rail design for 3.3 V systems.
• Compact VFBGA footprint: 90-ball VFBGA (8×13 mm) package reduces PCB area while retaining a full 32-bit data path.
• Vendor documentation: Detailed datasheet content provides timing tables, command descriptions, and package/ball assignments to support design validation.

Why Choose MT48LC2M32B2B5-6A AAT:J TR?

This Micron 64 Mbit ×32 SDRAM combines synchronous SDRAM architecture with automotive-grade qualification to deliver a compact, deterministic memory option for applications that require both performance and extended temperature operation. The device’s documented timing, programmable burst modes, and internal bank structure provide system designers with the control needed for predictable memory behavior in parallel SDRAM designs.

The MT48LC2M32B2B5-6A AAT:J TR is well suited to customers developing automotive and embedded platforms that demand a small‑footprint, 3.3 V SDRAM solution backed by comprehensive datasheet specifications and timing information.

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