MT48LC2M32B2B5-6A AIT:J TR

The MT48LC2M32B2B5-6A AIT:J TR is a 64 Mbit SDR SDRAM organized as 2M × 32 with a parallel memory interface in a 90-ball VFBGA (8 × 13) package. It implements fully synchronous SDRAM architecture with internal banks and pipelined operation for predictable, clocked data transfers.

Designed and qualified for demanding applications, this device targets systems requiring AEC-Q100 qualification, a 3.0–3.6 V supply range, and an operating ambient temperature from −40 °C to +85 °C. Key attributes include a 167 MHz clock rating (speed grade -6A), programmable burst lengths, and support for CAS latencies 1–3.

Key Features

• SDR SDRAM Core  Fully synchronous SDRAM with registered signals on the positive clock edge and internal pipelined operation for column address changes every clock cycle.
• Memory Organization  64 Mbit capacity organized as 2M × 32 with 4 internal banks (512K × 32 × 4 banks).
• Performance & Timing  Target clock frequency 167 MHz (speed grade -6A) with an access time listed at 5.4 ns and a word/page write cycle time of 12 ns; supports CAS latencies (CL) of 1, 2, and 3.
• Burst and Refresh  Programmable burst lengths of 1, 2, 4, 8 or full page, with auto refresh and self refresh modes; refresh options include automotive timing (16 ms, 4096-cycle) as documented in the datasheet.
• Interface Levels  LVTTL-compatible inputs and outputs suitable for parallel SDRAM system interfaces.
• Power  Single-supply operation across 3.0 V to 3.6 V (datasheet: single 3.3 V ±0.3 V power supply), simplifying power domain integration.
• Package & Thermal  90-ball VFBGA (8 mm × 13 mm) package (SupplierDevicePackage: 90-VFBGA (8x13)) for compact board-level integration.
• Qualification & Grade  AEC-Q100 qualification and Automotive grade designation for designs requiring industry-recognized device qualification.

Typical Applications

• Automotive systems  AEC-Q100-qualified SDRAM for automotive modules that require qualified parallel DRAM memory and operation across −40 °C to +85 °C ambient.
• Embedded control and instrumentation  Parallel SDRAM for buffering and working memory in embedded controllers and instrumentation where synchronous, banked memory improves throughput.
• High-reliability electronics  Systems requiring qualified memory components and predictable refresh timing for long-term, regulated operation.

Unique Advantages

• Qualified for automotive use: AEC-Q100 qualification and Automotive grade labeling provide documented qualification for regulated applications.
• Deterministic synchronous operation: Fully synchronous design with internal banks and pipelined operation enables consistent timing behavior in parallel memory systems.
• Flexible burst and latency options: Programmable burst lengths and support for CL = 1, 2, 3 allow designers to tune throughput and latency for target workloads.
• Compact board footprint: 90-ball VFBGA (8 × 13 mm) package provides a space-efficient form factor for dense PCB layouts.
• Wide supply range: Single-supply operation from 3.0 V to 3.6 V supports common 3.3 V system power rails and eases integration.

Why Choose MT48LC2M32B2B5-6A AIT:J TR?

This Micron 64 Mbit ×32 SDRAM combines synchronous, banked architecture with AEC-Q100 qualification and an automotive-grade designation to address applications that require qualified memory in a compact VFBGA package. With documented timing options, programmable burst lengths, and LVTTL-compatible I/O, it provides predictable performance for parallel-memory system designs.

The device is suited for designers and procurement teams building systems that need qualified, board-level SDRAM with explicit electrical and timing characteristics, a defined operating temperature range, and a small package footprint for space-constrained designs.

If you would like pricing, availability, or a formal quote for MT48LC2M32B2B5-6A AIT:J TR, please request a quote or submit a pricing inquiry to initiate the procurement process.