W74M12JVSSIQ TR

IC FLASH 128MBIT SPI/QUAD 8SOIC
Part Description

IC FLASH 128MBIT SPI/QUAD 8SOIC

Quantity 659 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package8-SOICMemory FormatFLASHTechnologyFLASH - NAND
Memory Size128 MbitAccess TimeN/AGradeIndustrial
Clock Frequency133 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page3 msPackaging8-SOIC (0.209", 5.30mm Width)
Mounting MethodNon-VolatileMemory InterfaceSPI - Quad I/O, QPIMemory Organization16M x 8
Moisture Sensitivity Level1 (Unlimited)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of W74M12JVSSIQ TR – IC FLASH 128MBIT SPI/QUAD 8SOIC

The W74M12JVSSIQ TR is a 128 Mbit non-volatile NAND flash memory in a compact 8-SOIC package. It implements SPI Quad I/O and QPI interfaces and is organized as 16M × 8 bits.

Designed for systems that require external flash storage, the device supports a 133 MHz clock rate, operates from a 2.7 V to 3.6 V supply, and is specified for an ambient temperature range of −40 °C to 85 °C.

Key Features

  • Memory Core 128 Mbit NAND Flash organized as 16M × 8, providing non-volatile storage in a serial FLASH format.
  • Interfaces SPI – Quad I/O and QPI support for high-throughput serial flash communication.
  • Clock Supports operation up to 133 MHz to accommodate higher-speed serial transfers.
  • Supply Voltage Operates from 2.7 V to 3.6 V to match common system power rails.
  • Write Performance Page/word write cycle time specified at 3 ms.
  • Package 8-SOIC package (0.209", 5.30 mm width) for straightforward through-hole-compatible surface mounting.
  • Operating Temperature Specified for −40 °C to 85 °C ambient operation.

Typical Applications

  • Embedded Systems Provides non-volatile storage via SPI/Quad I/O for code and data in embedded designs.
  • Consumer Electronics Compact 8-SOIC footprint and 2.7 V–3.6 V operation suit integration into consumer products requiring external flash.
  • Industrial Controls Temperature range to −40 °C to 85 °C supports deployment in industrial environments needing external FLASH memory.

Unique Advantages

  • Serial Quad and QPI Support: Enables higher-throughput serial flash operations compared to standard SPI by utilizing Quad I/O and QPI modes.
  • Compact Packaging: 8-SOIC package provides a small footprint for space-constrained boards while maintaining a standard supplier device package.
  • Wide Voltage Range: 2.7 V–3.6 V supply compatibility eases integration with common system power rails.
  • Extended Temperature Rating: −40 °C to 85 °C operating range supports deployment across a broad set of ambient conditions.
  • Deterministic Write Time: 3 ms write cycle time for page/word operations allows predictable programming behavior.

Why Choose W74M12JVSSIQ TR?

The W74M12JVSSIQ TR delivers 128 Mbit of NAND flash storage in a standardized 8-SOIC package with SPI Quad I/O and QPI interface options. Its supported 133 MHz clock rate, 2.7 V–3.6 V supply range, and −40 °C to 85 °C operating temperature make it suitable for designs that require a compact, externally accessible non-volatile memory solution.

This device is appropriate for engineers and procurement teams specifying external flash for embedded, consumer, or industrial applications where interface flexibility, predictable write timing, and a common package form factor are required.

Request a quote or submit an inquiry for the W74M12JVSSIQ TR to receive pricing and availability information tailored to your project needs.

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