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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | B3221XM3BDGVI-U | Kingston Technology | IC DRAM 32GBIT PAR 200FBGA | DRAM Memory | 200-FBGA (10x14.5) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2G x 16 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 199 | ||
 | C3222PM4CDGUIW-U | Kingston Technology | C3222PM4CDGUIW-U | DRAM Memory | 200-FBGA (10x14.5) | N/A | -40°C ~ 95°C | Access Time: 3.5 ns Clock Frequency: 1.86 GHz Grade: Automotive Memory Format: DRAM Memory Interface: N/A Memory Organization: 1G x 16 Memory Size: 32 Gbit Memory Type: N/A Packaging: 200-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 605 | ||
| N/A | N/A | EDFB164A1MA-GD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 819 | |
| N/A | N/A | EDFB164A1MA-GD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 671 | |
| N/A | N/A | EDFB164A1MA-JD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 469 | |
| N/A | N/A | EDFB164A1MA-JD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 512M x 64 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,561 | |
| N/A | N/A | EDFB232A1MA-GD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 567 | |
| N/A | N/A | EDFB232A1MA-GD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 800MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 800 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 1,190 | |
| N/A | N/A | EDFB232A1MA-JD-F-D | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 228 | |
| N/A | N/A | EDFB232A1MA-JD-F-R TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 933MHZ | DRAM Memory | N/A | 1.14V ~ 1.95V | -30°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 933 MHz Grade: Commercial (Extended) Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: N/A Qualification: N/A Technology: SDRAM - Mobile LPDDR3 Write Cycle Time Word Page: N/A | 947 | |
| N/A | EMC643SP16CKDT-70LFx | Jeju Semiconductor Corporation | A/D Mux CRAM1.5-ver. Sync-Burst | DRAM Memory | 49-BGA (4x4mm) | 1.8V | -30°C - 85°C | Access Time: 70 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: RAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Technology: CRAM | 438 | ||
| N/A | EMC643SP16CKx | Jeju Semiconductor Corporation | A/D Mux CRAM1.5-ver. Sync-Burst | DRAM Memory | Die | 1.8V | -30°C - 85°C | Access Time: 70 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: RAM Memory Interface: Parallel Memory Organization: 4M x 16 Memory Size: 64 Mbit Memory Type: Volatile Technology: CRAM | 852 | ||
| N/A | EMD28164PCH-60x | Jeju Semiconductor Corporation | 128Mb Mobile LPDDR SDRAM, x16, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | -30°C - 85°C | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Extended Memory Format: RAM Memory Interface: LPDDR Memory Organization: x16 Memory Size: 128 Mbit Memory Type: Volatile Technology: SDRAM - Mobile LPDDR | 1,238 | ||
| N/A | EMD56164PBH-60x | Jeju Semiconductor Corporation | 256 Mbit Mobile LPDDR SDRAM, x16, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | -30°C - 85°C | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Extended Memory Format: RAM Memory Interface: LPDDR Memory Organization: x16 Memory Size: 256 Mbit Memory Type: Volatile Technology: SDRAM - Mobile LPDDR | 1,717 | ||
| N/A | EMD56164PCH-60x | Jeju Semiconductor Corporation | 256 Mbit Mobile LPDDR SDRAM, 60‑FBGA | DRAM Memory | 60-BGA (8x9mm) | 1.7~1.95V | -30°C - 85°C | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Extended Memory Format: RAM Memory Interface: LPDDR Memory Organization: x16 Memory Size: 256 Mbit Memory Type: Volatile Technology: SDRAM - Mobile LPDDR | 443 | ||
 | H54G46CYRBX267 | SK Hynix | 2GB LPDDR4/LPDDR4X 4266Mbps Commercial | DRAM Memory | 200-FBGA (10×15) | 0.57V ~ 1.95V | −25°C – 85°C | Memory Size: 2 GB Clock Frequency: 2133 MHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR4/LPDDR4X Memory Organization: 2 × 512M × 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 200-FBGA | 20,000 | ||
| H54G46CYRVX267 | SK Hynix | 2GB LPDDR4X 4266Mbps Automotive | DRAM Memory | 200-FBGA (10×15) | 0.57V ~ 1.95V | −40°C – 95°C | Memory Size: 2 GB Clock Frequency: 2133 MHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR4X Memory Organization: 2 × 512M × 16 Memory Interface: Parallel Grade: Automotive Qualification: AEC-Q100 Packaging: 200-FBGA | 4,800 | ||
| N/A | N/A | H58G66BK8QX105N | SK Hynix | 8GB LPDDR5X-8533 automotive 441-FBGA | DRAM Memory | 441-ball FBGA (14×14) | 0.5V ~ 1.8V | -40°C ~ 105°C | Memory Size: 8 GB Clock Frequency: 4266 MHz Write Cycle Time Word Page: N/A Access Time: N/A Memory Type: Volatile Memory Format: DRAM Technology: LPDDR5X Memory Organization: 4 × 1G × 16 Memory Interface: Parallel Grade: Automotive Qualification: JEDEC Packaging: 441-FBGA | 2,000 | |
| N/A | H5TQ4G83EFR-TEI | SK Hynix | DDR3-2133 4Gb DDR3 SDRAM x8 | DRAM Memory | 78-BGA (7.5x11.0mm) | 1.5V | -40°C - 95°C | Memory Size: 4 Gbit Memory Format: DRAM Technology: SDRAM - DDR3 Clock Frequency: 1066 MHz Access Time: 13.09 ns Memory Interface: DDR3 SDRAM Grade: Industrial Memory Type: Volatile Memory Organization: x8 Mounting Method: Surface Mount | 474 | ||
| N/A | N/A | H9HCNNNCPMMLXR-NEE | SK Hynix | 4GB LPDDR4X-4266 200-ball FBGA | DRAM Memory | 200-FBGA | 0.6V ~ 1.8V | -25°C – 85°C | Memory Size: 4 GB Memory Format: DRAM Technology: LPDDR4X Clock Frequency: 2133 MHz Memory Interface: Parallel Grade: Commercial Memory Type: Volatile Memory Organization: x16 Mounting Method: Surface Mount Qualification: JEDEC | 140,000 |
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