EMC643SP16CKx

A/D Mux CRAM1.5-ver. Sync-Burst
Part Description

A/D Mux CRAM1.5-ver. Sync-Burst

Quantity 1,535 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatRAMTechnologyCRAM
Memory Size64 MbitAccess Time70 nsGradeCommercial
Clock Frequency133 MHzVoltage1.8VMemory TypeVolatile
Operating Temperature-30°C - 85°CMounting MethodSurface MountMemory InterfaceParallel
Memory Organization4M x 16Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.41

Overview of EMC643SP16CKx – A/D Mux CRAM1.5-ver. Sync-Burst

The EMC643SP16CKx is a 64 Mbit (4M × 16) CellularRAM device with a 16-bit multiplexed address/data bus and support for both asynchronous and burst operation. It implements CRAM technology at a low-voltage 1.8 V supply (VCC/VCCQ range 1.7–1.95 V) and targets embedded and wireless systems that require high-speed burst access with low standby and deep-power-down modes.

Designed for applications that need flexible burst lengths and low-power modes, the EMC643SP16CKx delivers burst read/write operation up to 133 MHz and supports multiple burst lengths with deterministic initial latency.

Key Features

  • Memory Core 64 Mbit organized as 4M × 16, volatile CRAM memory optimized for embedded parallel memory interfaces.
  • Multiplexed Address/Data Interface 16-bit multiplexed address/data bus for compact pin usage and parallel system integration.
  • Burst & Asynchronous Modes Single device supports asynchronous access and burst operation with selectable burst lengths of 4, 8, 16, 32 words or continuous burst; supports wrap or sequential burst types.
  • High-Speed Operation Maximum clock rates specified at 108 MHz (tCLK = 9.26 ns) and 133 MHz (tCLK = 7.5 ns), with burst initial latency of 37.0 ns (4 clocks) @ 108 MHz and 37.5 ns (5 clocks) @ 133 MHz.
  • Performance Timing Random access time and write cycle time (word/page) rated at 70 ns, providing predictable single-access performance.
  • Low Power & Sleep Modes Low active currents (asynchronous read <25 mA), burst read currents (initial and continuous ranges provided up to <40 mA depend on clock), and deep power-down current <20 µA (max at 85 °C) with typical deep power-down <5 µA at 25 °C.
  • On-Chip Reliability Features Includes temperature compensated self refresh (TCSR) and partial array refresh (PAR) to reduce power during idle periods.
  • Supply & Package Operates from 1.8 V nominal supply (VCC/VCCQ 1.7–1.95 V); available as a surface-mount device in a 54-FPBGA package (supplier also lists die availability).
  • Operating Range Commercial-grade operating temperature range of −30 °C to +85 °C (wireless grade as specified for EMC643SP16CK-SU).
  • Standby & Deep Power Characteristics Standby currents specified (typical standby figures available in datasheet) and deep power-down modes for minimal leakage during storage or long idle periods.

Typical Applications

  • Wireless systems — Suitable for wireless equipment that requires the stated −30 °C to +85 °C operating range and burst memory access.
  • Embedded systems with burst access — Ideal where deterministic burst reads/writes and selectable burst lengths improve system throughput and timing predictability.
  • Low-power designs — Deep power-down, TCSR and PAR features reduce standby and idle power for battery-sensitive or energy-conscious designs.

Unique Advantages

  • Flexible burst architecture — Selectable burst lengths (4/8/16/32/continuous) and wrap/sequential modes let designers match memory bursts to system transfer patterns.
  • Low-voltage operation — VCC/VCCQ operation around 1.8 V (1.7–1.95 V range) supports modern low-voltage system rails.
  • Compact interface — 16-bit multiplexed address/data bus reduces pin count while maintaining a parallel memory interface.
  • Predictable performance — 70 ns random access and specified burst latencies at 108/133 MHz provide deterministic timing for embedded controllers and DMA engines.
  • Power management features — Deep power-down (<20 µA max at 85 °C), low active currents, and refresh control (TCSR, PAR) lower system power in idle and refresh scenarios.
  • Surface-mount package options — 54-FPBGA surface-mount packaging supports compact board layouts; die availability is also listed for alternate manufacturing flows.

Why Choose EMC643SP16CKx?

The EMC643SP16CKx is positioned for designers who need a mid-density, low-voltage cellular RAM with both asynchronous and high-speed burst capabilities. With a 4M × 16 organization, selectable burst lengths, and documented timing at up to 133 MHz, it provides a balance of throughput and control for embedded and wireless platforms.

Its low-power modes, on-chip refresh management (TCSR and PAR), and deep power-down support make it suitable for systems that require energy efficiency without sacrificing predictable access timing. The combination of surface-mount 54-FPBGA packaging and die availability gives flexibility for board-level integration and custom manufacturing requirements.

Request a quote or submit a pricing inquiry to receive availability, lead time, and ordering information for the EMC643SP16CKx.

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