EMC643SP16CKDT-70LFx

A/D Mux CRAM1.5-ver. Sync-Burst
Part Description

A/D Mux CRAM1.5-ver. Sync-Burst

Quantity 934 Available (as of June 16, 2026)
Product CategoryDRAM Memory
ManufacturerJeju Semiconductor Corporation
Manufacturing StatusMass Production
Manufacturer Standard Lead TimeContact Us
Datasheet

Specifications & Environmental

Device Package49-BGA (4x4mm)Memory FormatRAMTechnologyCRAM
Memory Size64 MbitAccess Time70 nsGradeCommercial
Clock Frequency133 MHzVoltage1.8VMemory TypeVolatile
Operating Temperature-30°C - 85°CMounting MethodSurface MountMemory InterfaceParallel
Memory Organization4M x 16Moisture Sensitivity Level3RoHS ComplianceCompliant
REACH ComplianceREACH UnknownECCNEAR99HTS Code8542.32.00.41

Overview of EMC643SP16CKDT-70LFx – A/D Mux CRAM1.5-ver. Sync-Burst

The EMC643SP16CKDT-70LFx is a 64 Mbit volatile CellularRAM (CRAM) organized as 4M × 16 with a multiplexed 16-bit address/data bus. Designed for parallel memory systems, it supports both asynchronous and synchronous burst operation with low-voltage 1.8V core and I/O supplies.

This part targets compact, power-conscious embedded and wireless applications that require fast random access (70 ns) and high-rate burst transfers (up to 133 MHz clock). Its small 49-FBGA (4 × 4 mm) package and low-power features make it suitable where board space and energy efficiency are important.

Key Features

  • Core / Memory Architecture 64 Mbit CellularRAM organized as 4M × 16, providing 16-bit data width and a multiplexed address/data bus for compact system routing.
  • Performance 70 ns random access time and support for burst operation with clock rates up to 133 MHz (tCLK = 7.5 ns) for high-throughput read/write bursts.
  • Burst and Latency Options Burst READ/WRITE modes support 4, 8, 16, 32 words or continuous burst with configurable wrap or sequential burst behavior and defined initial burst latencies.
  • Interface Parallel 16-bit multiplexed address/data interface suitable for systems requiring fast parallel transfers and traditional memory bus integration.
  • Low-Voltage Operation VCC and VCCQ domain operation in the 1.7–1.95 V range (typical 1.8 V) to support low-power system designs.
  • Low-Power Modes Deep power-down current under 20 µA (max at 85°C) and typical sub-5 µA at 25°C, plus standby currents and on-chip refresh features to reduce active and idle power.
  • On-Chip Refresh and Power Reliability Temperature compensated self refresh (TCSR) and partial array refresh (PAR) improve data retention and power management during idle periods.
  • Package and Temperature Surface-mount 49-FBGA (49-BGA, 4 × 4 mm) package with commercial-grade operating range of −30°C to +85°C.
  • RoHS Compliant Meets RoHS environmental requirements for lead-free assembly.

Typical Applications

  • Wireless Equipment Low-voltage operation, compact FBGA package, and burst access modes suit memory buffering and frame storage in wireless devices operating over the commercial temperature range.
  • Embedded Systems Fast random access (70 ns) and high-frequency burst capability make it useful for embedded controllers and local data scratchpad memory where repeated high-speed transfers are required.
  • High-Density Boards The 4M × 16 organization and 4 × 4 mm FBGA package enable dense memory integration on space-constrained PCBs.
  • Low-Power Designs Deep power-down and on-chip self-refresh features help reduce standby and idle power for battery-assisted systems and energy-sensitive applications.

Unique Advantages

  • Compact 16-bit CRAM 4M × 16 organization in a 49-FBGA (4 × 4 mm) package minimizes board area without sacrificing data width.
  • Flexible Burst Performance Multiple burst lengths and continuous burst mode with defined initial latencies enable designers to optimize throughput vs. latency based on system needs.
  • Low-Voltage, Low-Power Operation 1.8 V VCC/VCCQ operation combined with deep power-down (<20 µA max at 85°C) reduces system power draw in both active and standby states.
  • On-Chip Refresh Management Temperature compensated self refresh and partial array refresh provide improved retention control and lower refresh-related power consumption.
  • Commercial Temperature Range Rated for −30°C to +85°C, making it suitable for many consumer and wireless product environments.
  • RoHS Compliance Ready for lead-free assembly processes and modern environmental requirements.

Why Choose EMC643SP16CKDT-70LFx?

The EMC643SP16CKDT-70LFx delivers a balanced combination of fast random access (70 ns), high-rate burst capability (up to 133 MHz), and low-voltage 1.8 V operation in a compact 49-FBGA package. It is positioned for designs that need 64 Mbit of volatile CRAM with flexible burst modes, efficient power management, and on-chip refresh features for improved retention and lower standby power.

This device is well suited to embedded and wireless systems where board space, energy efficiency, and predictable burst performance are priorities. Backed by product documentation and manufacturer support, it provides a reliable memory option for designs targeting commercial temperature ranges.

Request a quote or submit a product inquiry to receive pricing, lead-time, and availability details for EMC643SP16CKDT-70LFx.

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