AS4C16M16D1-5TIN

The AS4C16M16D1-5TIN is a 256 Mbit volatile DDR SDRAM organized as 16M × 16 with a parallel memory interface. Packaged in a 66‑TSSOP (66‑TSOP II) footprint, it supports system memory and buffer applications that require parallel DDR access.

Key operational parameters include a 200 MHz clock frequency, 700 ps access time and a supply voltage range of 2.3 V to 2.7 V, with an operating temperature range of −40 °C to 85 °C for board‑level designs needing stable performance across temperature extremes.

Key Features

• Core / Technology DDR SDRAM architecture providing volatile, parallel DRAM operation.
• Memory Organization & Capacity 256 Mbit total capacity arranged as 16M × 16 for word‑oriented parallel access.
• Performance Clock frequency rated at 200 MHz with a typical access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Power Operates from a 2.3 V to 2.7 V supply range suitable for low‑voltage system designs.
• Package 66‑TSSOP (0.400", 10.16 mm width) / 66‑TSOP II supplier device package for compact board‑level integration.
• Temperature Range Industrial operating range from −40 °C to 85 °C (TA) for extended environmental tolerance.
• Memory Interface Parallel memory interface for straightforward integration into parallel DRAM subsystems.

Typical Applications

• Embedded memory subsystems — Provides 256 Mbit of parallel DDR SDRAM (16M × 16) for systems requiring board‑level DRAM expansion.
• Data buffering and temporary storage — Suited for designs that need volatile high‑speed buffering with 200 MHz clocking and 700 ps access times.
• Space‑constrained board designs — 66‑TSSOP (66‑TSOP II) package supports compact mounting in dense PCB layouts.

Unique Advantages

• Parallel DDR architecture: Enables direct integration into parallel memory subsystems using a 16‑bit data organization.
• Predictable timing performance: 200 MHz clock and 700 ps access time provide defined timing characteristics for system design and validation.
• Low‑voltage operation: 2.3 V to 2.7 V supply reduces power budget compared with higher‑voltage parts where applicable.
• Compact TSOP II package: 66‑TSSOP (0.400", 10.16 mm) footprint minimizes board area for high‑density layouts.
• Wide operating temperature: −40 °C to 85 °C rating supports deployment across a broad range of environmental conditions.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The AS4C16M16D1-5TIN delivers a balanced combination of density, timing performance and compact packaging for parallel DDR DRAM applications. Its 16M × 16 organization and 256 Mbit capacity make it suitable for designs that require predictable parallel memory behavior at up to 200 MHz clock rates.

With low‑voltage operation (2.3 V–2.7 V) and an extended operating temperature range (−40 °C to 85 °C), this device addresses board‑level memory needs where footprint, timing consistency and ambient tolerance are key considerations.

Request a quote or submit an inquiry to obtain pricing, lead time and availability information for the AS4C16M16D1-5TIN.