AS4C16M16D1A-5TCN
| Part Description |
IC DRAM 256MBIT PAR 66TSOP II |
|---|---|
| Quantity | 593 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B2A | HTS Code | 8542.32.0024 |
Overview of AS4C16M16D1A-5TCN - 256Mbit DDR SDRAM Memory IC
The AS4C16M16D1A-5TCN from Alliance Memory is a 256Mbit DDR SDRAM integrated circuit organized as 16M x 16. This parallel-interface volatile memory delivers 200MHz clock frequency with 7ns access time, making it suitable for applications requiring fast data throughput. Operating from 2.3V to 2.7V, this memory IC combines performance with efficient power consumption for embedded systems and industrial computing platforms.
Key Features
- Memory Architecture - 256Mbit capacity organized as 16 million words by 16 bits, providing flexible data access patterns for various system requirements.
- DDR SDRAM Technology - Double Data Rate Synchronous DRAM operates at 200MHz clock frequency with 7ns access time, enabling high-bandwidth data transfers.
- Power Supply - Operates from 2.3V to 2.7V supply voltage, compatible with standard low-voltage digital systems.
- Parallel Interface - Direct memory access through parallel bus simplifies integration with microcontrollers and processors.
- Package Configuration - 66-TSOP II surface mount package (0.400" width, 10.16mm) supports standard PCB assembly processes.
- Operating Temperature - Rated for 0°C to 70°C ambient temperature range, suitable for commercial and industrial environments.
Typical Applications
- Embedded Computing Systems - This DDR SDRAM serves as main memory in embedded controllers and single-board computers where the 256Mbit capacity and 200MHz speed support real-time data processing and program execution.
- Industrial Control Equipment - The 0°C to 70°C operating range makes this memory suitable for programmable logic controllers and factory automation systems that require reliable data storage in temperature-variable industrial settings.
- Network Infrastructure - Provides buffer memory for routers, switches, and network appliances where fast access times enable efficient packet processing and routing operations.
- Digital Signal Processing - The parallel interface and high-speed operation support DSP applications requiring rapid data access for signal filtering, transformation, and analysis algorithms.
- Test and Measurement Instruments - Serves as acquisition memory in oscilloscopes and data loggers where the combination of capacity and speed enables capture of high-frequency signals and large data sets.
Unique Advantages
- Simplified Design Integration: Parallel interface eliminates the complexity of serial memory protocols, reducing firmware development time and board-level design effort.
- Cost-Effective Performance: DDR SDRAM technology provides double the data rate of SDR memory at comparable cost, maximizing bandwidth within budget constraints.
- Reliable Volatile Memory: SDRAM architecture offers predictable timing characteristics and stable operation across the specified temperature range, simplifying system validation.
- Standard Package Footprint: 66-TSOP II package uses industry-standard dimensions, enabling second-source options and simplified supply chain management.
- Low-Voltage Operation: 2.3V to 2.7V supply voltage reduces system power consumption and heat generation compared to older 3.3V memory devices.
- Active Lifecycle Status: Current production availability ensures long-term supply for new designs and existing product maintenance.
Why Choose AS4C16M16D1A-5TCN?
The AS4C16M16D1A-5TCN offers a proven memory solution for designs requiring balance between capacity, speed, and cost. Its 200MHz DDR operation delivers sufficient bandwidth for most embedded applications while maintaining compatibility with standard parallel bus architectures. The commercial temperature range and active lifecycle status make this device appropriate for industrial and commercial products with multi-year production horizons.
Engineers designing systems around microcontrollers, FPGAs, or processors with parallel memory interfaces will find this 256Mbit SDRAM provides straightforward integration without requiring complex memory controller implementations. The low-voltage operation contributes to overall system efficiency, particularly relevant in battery-powered or thermally-constrained designs.
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