AS4C16M16SA-6BIN

The IC DRAM 256MBIT PAR 54TFBGA is a volatile SDRAM device organized as 16M x 16, providing 256 Mbit of parallel-access memory in a 54‑TFBGA (8×8) package. It implements a parallel SDRAM architecture optimized for systems that require mid-density, high-speed memory with a standard parallel interface.

Key characteristics include a 166 MHz clock frequency, 5 ns access time, and a supply voltage range of 3 V to 3.6 V. The device supports operation across an industrial temperature window of -40°C to 85°C (TA), making it suitable for designs requiring stable DRAM performance within that range.

Key Features

• Memory Type & Technology Volatile SDRAM organized as 16M x 16, delivering 256 Mbit of parallel DRAM storage.
• Performance 166 MHz clock frequency with a 5 ns access time and a 12 ns write cycle time (word/page) for predictable read/write timing.
• Voltage Broad supply range of 3 V to 3.6 V to accommodate 3 V-class system rails.
• Package 54‑TFBGA (8×8) ball grid array package for compact PCB mounting and high I/O density.
• Interface Parallel memory interface suitable for systems that use parallel DRAM topology and timing.
• Thermal Range Rated for operation from -40°C to 85°C (TA), supporting designs that require this ambient range.

Typical Applications

• Parallel memory subsystems Provides 256 Mbit of SDRAM for systems that require parallel-access volatile storage with 16M x 16 organization.
• On‑board DRAM expansion Used as an on‑board memory component where a 54‑TFBGA package and 3 V supply are preferred.
• Buffer and working memory Serves as working DRAM for designs needing a predictable access time (5 ns) and defined write cycle timing (12 ns).

Unique Advantages

• Clear capacity and organization: 256 Mbit organized as 16M x 16, simplifying memory mapping and interface design.
• Measured timing parameters: 5 ns access time and 12 ns write cycle time give deterministic timing for system designers.
• High-frequency operation: 166 MHz clock support aligns with systems targeting mid‑range SDRAM performance.
• Compact package: 54‑TFBGA (8×8) offers a space-efficient footprint for high-density board layouts.
• Wide supply tolerance: Operates across 3 V to 3.6 V supply rails, accommodating common 3 V system environments.
• Extended ambient range: Specified operation from -40°C to 85°C (TA) for applications within that temperature window.

Why Choose IC DRAM 256MBIT PAR 54TFBGA?

This 256 Mbit parallel SDRAM balances defined timing characteristics, a mid‑density memory organization, and a compact 54‑TFBGA package to meet designs that require predictable parallel DRAM behavior. Its 166 MHz clock capability, 5 ns access time, and 12 ns write cycle time support systems where deterministic memory timing and a 16M x 16 interface are primary concerns.

The device is well suited to designers seeking a straightforward parallel SDRAM component with a 3 V–3.6 V supply range and an ambient operating range of -40°C to 85°C. Its clear specification set aids integration, verification, and long-term maintenance in appropriate system environments.

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