AS4C16M16SA-6BAN

The AS4C16M16SA-6BAN is a 256 Mbit volatile DRAM device implemented in SDRAM architecture with a parallel memory interface. It is organized as 16M × 16 and supplied in a 54-TFBGA (8×8) package for compact board-level integration.

Designed for applications requiring high-speed parallel memory, the device provides a 166 MHz clock frequency, 5 ns access time and a write cycle time (word page) of 12 ns. It is qualified to AEC-Q100 and specified over an operating temperature range of −40°C to 105°C.

Key Features

• Memory Type & Architecture SDRAM, volatile memory organized as 16M × 16 for 256 Mbit capacity.
• Performance 166 MHz clock frequency with a 5 ns access time and 12 ns write cycle time (word page) for parallel memory operations.
• Interface Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
• Power Rated supply voltage 3.0 V to 3.6 V to match common system voltage domains.
• Package 54-TFBGA (8×8) package for compact surface-mount deployment.
• Temperature Range Specified for operation from −40°C to 105°C (TA).
• Qualification AEC-Q100 qualified; listed with Automotive grade.

Typical Applications

• Automotive modules AEC-Q100 qualification and the −40°C to 105°C range make this DRAM suitable for automotive electronic modules requiring SDRAM storage.
• Embedded memory expansion Provides 256 Mbit of parallel SDRAM capacity for embedded controllers and systems that need fast read/write buffer memory.
• High-temperature environments Specified operating temperature enables deployment in systems exposed to extended temperature ranges.

Unique Advantages

• Automotive-grade qualification: AEC-Q100 qualification and an Automotive grade designation support use in automotive system designs.
• High-speed operation: 166 MHz clock frequency and 5 ns access time enable responsive parallel memory performance.
• Compact BGA footprint: 54-TFBGA (8×8) package minimizes PCB area while supporting surface-mount assembly.
• Wide operating voltage: 3.0 V to 3.6 V supply range aligns with common system power rails.
• Robust temperature range: −40°C to 105°C rating supports deployment across demanding thermal environments.
• Clear memory organization: 16M × 16 organization provides deterministic capacity and data-width characteristics for system designers.

Why Choose AS4C16M16SA-6BAN?

The AS4C16M16SA-6BAN combines a 256 Mbit SDRAM architecture with fast access and write timings in a compact 54-TFBGA package, making it suitable for designs that require reliable parallel DRAM performance. Its AEC-Q100 qualification, automotive grade listing and wide temperature range support use in demanding automotive and industrial environments.

Engineers specifying this device benefit from a clear memory organization (16M × 16), a 3.0 V–3.6 V supply window and verified timing characteristics (166 MHz clock, 5 ns access, 12 ns write cycle) to integrate predictable SDRAM capacity into system-level designs.

Request a quote or contact sales to discuss pricing, lead times and technical details for the AS4C16M16SA-6BAN.