AS4C32M16D1-5BCN

IC DRAM 512MBIT PAR 60TFBGA
Part Description

IC DRAM 512MBIT PAR 60TFBGA

Quantity 695 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of AS4C32M16D1-5BCN - 512Mbit DDR SDRAM in 60-TFBGA Package

The AS4C32M16D1-5BCN from Alliance Memory is a 512Mbit DDR SDRAM organized as 32M x 16 bits, delivering high-bandwidth memory performance for embedded and computing applications. With a 200MHz clock frequency and 0.7ns access time, this parallel interface DRAM provides reliable volatile memory storage in a compact 60-TFBGA package.

Operating from a 2.3V to 2.7V supply voltage, this DDR SDRAM offers an efficient solution for systems requiring fast data access with moderate power consumption. The commercial temperature range of 0°C to 70°C makes it suitable for a wide variety of indoor and controlled environment applications.

Key Features

  • Memory Configuration - 512Mbit capacity organized as 32M x 16, providing ample storage for data-intensive embedded applications with a 16-bit data bus width.
  • DDR SDRAM Technology - Double Data Rate architecture doubles effective bandwidth compared to single data rate SDRAM by transferring data on both clock edges.
  • High-Speed Performance - 200MHz clock frequency with 0.7ns access time and 15ns write cycle time enables rapid data transfers for demanding workloads.
  • Low Voltage Operation - 2.3V to 2.7V supply voltage range reduces power consumption while maintaining compatibility with standard DDR memory controllers.
  • Compact Package - 60-TFBGA (8x13mm) ball grid array package provides a space-efficient mounting solution for density-constrained PCB designs.
  • Commercial Temperature Range - Operates reliably from 0°C to 70°C ambient temperature for indoor and climate-controlled environments.

Typical Applications

  • Networking Equipment - This DDR SDRAM provides packet buffering and routing table storage for switches, routers, and network appliances where high bandwidth and low latency are essential for data throughput.
  • Consumer Electronics - Set-top boxes, digital televisions, and media players benefit from the 512Mbit capacity for frame buffering and application data storage.
  • Embedded Computing - Single-board computers and embedded systems leverage the 32M x 16 organization for efficient memory addressing in Linux and RTOS-based designs.
  • Office Automation - Printers, copiers, and multifunction devices use this SDRAM for image processing and print queue management where commercial temperature operation is sufficient.

Unique Advantages

  • Alliance Memory Reliability: Second-source compatibility and long-term availability commitment help reduce supply chain risk for production programs.
  • Parallel Interface Simplicity: Standard DDR SDRAM interface integrates easily with existing memory controllers without complex protocol overhead.
  • Balanced Capacity and Speed: 512Mbit density at 200MHz clock provides an optimal combination of storage and bandwidth for mid-range embedded designs.
  • Space-Efficient TFBGA: The 8x13mm package footprint enables compact board layouts while maintaining thermal dissipation through the ball grid array.
  • Wide Supply Tolerance: The 2.3V to 2.7V operating range accommodates supply variations and simplifies power rail design.

Why Choose AS4C32M16D1-5BCN?

The AS4C32M16D1-5BCN is an excellent choice for design engineers seeking a proven DDR SDRAM solution with dependable performance characteristics. Alliance Memory's focus on longevity and second-source availability makes this device particularly attractive for products with extended lifecycle requirements.

For applications requiring 512Mbit of high-speed volatile memory in a compact form factor, the AS4C32M16D1-5BCN delivers the bandwidth, capacity, and reliability that embedded system designers demand.

Get Started

Contact our sales team to discuss your memory requirements and request a quotation for the AS4C32M16D1-5BCN. Our technical support engineers can assist with design-in questions and provide guidance on implementing this DDR SDRAM in your application.

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