AS4C32M16D1-5BCN
| Part Description |
IC DRAM 512MBIT PAR 60TFBGA |
|---|---|
| Quantity | 695 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of AS4C32M16D1-5BCN - 512Mbit DDR SDRAM in 60-TFBGA Package
The AS4C32M16D1-5BCN from Alliance Memory is a 512Mbit DDR SDRAM organized as 32M x 16 bits, delivering high-bandwidth memory performance for embedded and computing applications. With a 200MHz clock frequency and 0.7ns access time, this parallel interface DRAM provides reliable volatile memory storage in a compact 60-TFBGA package.
Operating from a 2.3V to 2.7V supply voltage, this DDR SDRAM offers an efficient solution for systems requiring fast data access with moderate power consumption. The commercial temperature range of 0°C to 70°C makes it suitable for a wide variety of indoor and controlled environment applications.
Key Features
- Memory Configuration - 512Mbit capacity organized as 32M x 16, providing ample storage for data-intensive embedded applications with a 16-bit data bus width.
- DDR SDRAM Technology - Double Data Rate architecture doubles effective bandwidth compared to single data rate SDRAM by transferring data on both clock edges.
- High-Speed Performance - 200MHz clock frequency with 0.7ns access time and 15ns write cycle time enables rapid data transfers for demanding workloads.
- Low Voltage Operation - 2.3V to 2.7V supply voltage range reduces power consumption while maintaining compatibility with standard DDR memory controllers.
- Compact Package - 60-TFBGA (8x13mm) ball grid array package provides a space-efficient mounting solution for density-constrained PCB designs.
- Commercial Temperature Range - Operates reliably from 0°C to 70°C ambient temperature for indoor and climate-controlled environments.
Typical Applications
- Networking Equipment - This DDR SDRAM provides packet buffering and routing table storage for switches, routers, and network appliances where high bandwidth and low latency are essential for data throughput.
- Consumer Electronics - Set-top boxes, digital televisions, and media players benefit from the 512Mbit capacity for frame buffering and application data storage.
- Embedded Computing - Single-board computers and embedded systems leverage the 32M x 16 organization for efficient memory addressing in Linux and RTOS-based designs.
- Office Automation - Printers, copiers, and multifunction devices use this SDRAM for image processing and print queue management where commercial temperature operation is sufficient.
Unique Advantages
- Alliance Memory Reliability: Second-source compatibility and long-term availability commitment help reduce supply chain risk for production programs.
- Parallel Interface Simplicity: Standard DDR SDRAM interface integrates easily with existing memory controllers without complex protocol overhead.
- Balanced Capacity and Speed: 512Mbit density at 200MHz clock provides an optimal combination of storage and bandwidth for mid-range embedded designs.
- Space-Efficient TFBGA: The 8x13mm package footprint enables compact board layouts while maintaining thermal dissipation through the ball grid array.
- Wide Supply Tolerance: The 2.3V to 2.7V operating range accommodates supply variations and simplifies power rail design.
Why Choose AS4C32M16D1-5BCN?
The AS4C32M16D1-5BCN is an excellent choice for design engineers seeking a proven DDR SDRAM solution with dependable performance characteristics. Alliance Memory's focus on longevity and second-source availability makes this device particularly attractive for products with extended lifecycle requirements.
For applications requiring 512Mbit of high-speed volatile memory in a compact form factor, the AS4C32M16D1-5BCN delivers the bandwidth, capacity, and reliability that embedded system designers demand.
Get Started
Contact our sales team to discuss your memory requirements and request a quotation for the AS4C32M16D1-5BCN. Our technical support engineers can assist with design-in questions and provide guidance on implementing this DDR SDRAM in your application.