AS4C32M16D1-5BCNTR

IC DRAM 512MBIT PAR 60TFBGA
Part Description

IC DRAM 512MBIT PAR 60TFBGA

Quantity 1,542 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of AS4C32M16D1-5BCNTR - 512Mbit DDR SDRAM Memory IC

The AS4C32M16D1-5BCNTR from Alliance Memory, Inc. is a 512-megabit DDR SDRAM integrated circuit designed for high-performance parallel memory applications. This memory device features a 32M x 16 organization and operates at a 200MHz clock frequency with a 7ns access time, making it well-suited for embedded systems, industrial controllers, and computing applications requiring fast, reliable volatile memory.

Built on proven DDR SDRAM technology, this IC delivers efficient data throughput in a compact 60-TFBGA package, supporting commercial temperature operation from 0°C to 70°C.

Key Features

  • Memory Configuration - 512Mbit capacity organized as 32M x 16, providing flexible data width for various system architectures.
  • DDR SDRAM Technology - Double Data Rate SDRAM delivers data on both rising and falling clock edges, doubling effective bandwidth compared to standard SDRAM.
  • Performance Specifications - 200MHz clock frequency with 7ns access time and 15ns write cycle time ensures responsive memory operations for time-sensitive applications.
  • Power Supply - Operates from 2.3V to 2.7V supply voltage, compatible with common low-voltage system designs.
  • Package Options - Available in a space-efficient 60-TFBGA (8x13mm) package, ideal for designs with strict board space constraints.
  • Temperature Range - Commercial temperature rating (0°C ~ 70°C) supports standard operating environments.

Typical Applications

  • Industrial Automation Systems - The AS4C32M16D1-5BCNTR provides reliable working memory for PLCs, HMIs, and industrial controllers where the 0°C to 70°C operating range covers most factory floor environments and the parallel interface simplifies integration with existing control architectures.
  • Embedded Computing Platforms - This DDR SDRAM serves as system memory in embedded processors and SBCs, offering the speed needed for real-time applications while the 60-pin TFBGA footprint minimizes PCB area in space-constrained designs.
  • Telecommunications Equipment - Provides fast buffer memory in networking gear and communication devices where the 200MHz operation supports data packet processing and the low-voltage design reduces power consumption.
  • Test and Measurement Instruments - Serves as data capture and processing memory in oscilloscopes, analyzers, and diagnostic equipment where the 7ns access time enables high-speed data acquisition.
  • Medical Devices - Functions as working memory in diagnostic and monitoring equipment operating in controlled clinical environments within the 0°C to 70°C commercial temperature range.

Unique Advantages

  • Proven DDR Technology: Leverages mature DDR SDRAM architecture that has been widely deployed across industries, reducing design risk and ensuring reliable operation.
  • Compact Footprint with High Density: The 60-TFBGA package delivers 512Mbit of memory in just 8x13mm, enabling more compact product designs or freeing board space for additional functionality.
  • Standard Parallel Interface: Uses conventional parallel memory interface that simplifies integration with existing microprocessors and controllers without requiring specialized memory controllers.
  • Active Lifecycle Status: Currently in active production, ensuring long-term availability for designs requiring extended product lifecycles and minimizing obsolescence concerns.
  • Low Voltage Operation: 2.3V to 2.7V supply voltage reduces overall system power consumption and heat generation, simplifying thermal management in embedded applications.
  • Fast Access Performance: 7ns access time and 200MHz clock frequency provide responsive memory operations that support demanding real-time processing requirements.

Why Choose AS4C32M16D1-5BCNTR?

The AS4C32M16D1-5BCNTR is positioned for embedded and industrial designs that require reliable, fast volatile memory with a proven track record. Its combination of 512Mbit capacity, DDR performance, and compact TFBGA packaging makes it an excellent fit for space-constrained systems that need efficient working memory without compromising speed. The active lifecycle status and Alliance Memory's commitment to memory continuity make this part particularly valuable for designs with multi-year production horizons.

For engineers seeking a balance between performance, density, and reliability in commercial temperature applications, this DDR SDRAM offers a straightforward, well-supported solution backed by comprehensive documentation and an established supply chain.

Get Started with AS4C32M16D1-5BCNTR

Contact our technical sales team to discuss your memory requirements, request detailed specifications, or obtain pricing and lead time information. We can help you evaluate whether the AS4C32M16D1-5BCNTR meets your design needs and provide support throughout your development process.

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