AS4C32M16SA-7BIN

IC DRAM 512MBIT PAR 54FBGA
Part Description

IC DRAM 512MBIT PAR 54FBGA

Quantity 1,068 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-FBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page2 nsPackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of AS4C32M16SA-7BIN - 512Mbit Parallel SDRAM

The AS4C32M16SA-7BIN is a 512Mbit synchronous DRAM organized as 32M x 16, delivering reliable parallel memory performance for embedded systems and industrial applications. Built on proven SDRAM technology, this device operates from a 3V to 3.6V supply and features a 143MHz maximum clock frequency with 5.4ns access time. Designed for systems requiring moderate-density volatile memory with extended temperature operation, the AS4C32M16SA-7BIN provides a balanced solution for cost-sensitive designs.

Key Features

  • Memory Configuration - 512Mbit capacity organized as 32M x 16 for word-oriented data access, optimizing bandwidth for 16-bit bus architectures.
  • Performance - 143MHz maximum clock frequency with 5.4ns access time enables responsive data retrieval for real-time embedded applications.
  • Power Supply - 3V to 3.6V operation aligns with standard 3.3V logic levels, simplifying power distribution and reducing component count.
  • Parallel Interface - Traditional parallel SDRAM interface provides straightforward integration with legacy controllers and processors supporting synchronous DRAM protocols.
  • Package - Compact 54-TFBGA (8x8mm) footprint conserves board space while providing reliable solder joint connections.
  • Temperature Range - -40°C to 85°C operating range supports industrial and automotive environments without thermal derating.

Typical Applications

  • Industrial Control Systems - This SDRAM serves as working memory for PLCs and industrial controllers where the extended temperature range ensures reliable operation in factory floor environments and the parallel interface integrates with established control architectures.
  • Embedded Computing - Provides main system memory for embedded processors and microcontrollers in applications such as test equipment, point-of-sale terminals, and building automation where moderate density and proven SDRAM technology reduce development risk.
  • Legacy System Maintenance - Supports ongoing production and field service for existing designs using parallel SDRAM, ensuring continuity for systems where redesign costs outweigh component sourcing challenges.
  • Data Buffering - Functions as a buffer memory in communication equipment and data acquisition systems where the 16-bit wide data path efficiently handles streaming data without requiring multiple narrow devices.

Unique Advantages

  • Proven Technology Platform: SDRAM architecture offers mature, well-understood design rules and timing characteristics, reducing integration complexity compared to newer memory technologies.
  • Wide Temperature Operation: -40°C to 85°C range eliminates the need for thermal management in most industrial environments, lowering system cost and complexity.
  • Standard Interface Compatibility: Parallel SDRAM interface connects directly to legacy memory controllers without protocol conversion or additional glue logic.
  • 16-bit Data Width: Native 16-bit organization matches common processor bus widths, minimizing memory access cycles and improving effective bandwidth.
  • Space-Efficient Packaging: 54-TFBGA package delivers substantial memory density in an 8x8mm footprint, enabling compact board layouts.
  • 3.3V Standard Logic Levels: Power supply range integrates seamlessly with standard 3.3V system rails, avoiding level shifters or dedicated regulators.

Why Choose AS4C32M16SA-7BIN?

The AS4C32M16SA-7BIN addresses the ongoing need for parallel SDRAM in industrial and embedded applications where established architectures, extended temperature operation, and straightforward integration outweigh the performance advantages of newer memory technologies. For designs already using synchronous DRAM or maintaining existing products, this component provides a direct path to system memory without requiring controller redesign or software modification. The 512Mbit density fills the gap between smaller 256Mbit devices and larger 1Gbit parts, optimizing cost and capacity for mid-range applications.

This device is particularly suited for industrial control, legacy system support, and embedded computing platforms operating in extended temperature environments. While designated as obsolete lifecycle status, the AS4C32M16SA-7BIN remains relevant for ongoing production support, field service inventory, and designs where parallel SDRAM integration reduces time-to-market compared to migration to alternative memory technologies.

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Contact our sales team to discuss availability, pricing, and lead times for the AS4C32M16SA-7BIN. Our technical support staff can assist with integration guidance, reference designs, and lifecycle management strategies for your specific application requirements.

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