AS4C4M32SA-6TIN

The AS4C4M32SA-6TIN from Alliance Memory, Inc. is a 128 Mbit volatile SDRAM organized as 4M × 32 with a parallel interface. It delivers deterministic access behavior with a 166 MHz clock rating and a 5.4 ns access time, packaged in an 86-TSOP II form factor.

This device is intended for designs that require parallel SDRAM resources within a 3.0–3.6 V supply domain and extended temperature operation from −40°C to 85°C, offering compact board-level integration and predictable timing characteristics.

Key Features

• Memory Core 128 Mbit SDRAM organized as 4M × 32, providing a parallel DRAM memory array for system buffering and volatile storage.
• Performance Rated for a 166 MHz clock with a 5.4 ns access time and a write cycle time (word/page) of 2 ns for deterministic read/write timing.
• Interface Parallel memory interface suitable for designs that use conventional DRAM bus architectures.
• Power Operates from a 3.0 V to 3.6 V supply range to match standard 3.3 V system rails.
• Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) surface-mount package for compact PCB footprint.
• Temperature Range Specified for operation from −40°C to 85°C (TA) to support extended temperature system environments.

Typical Applications

• Embedded system memory — Provides parallel SDRAM storage for systems requiring 4M × 32 memory organization and predictable timing.
• Industrial control equipment — Suitable for designs that need memory operation across −40°C to 85°C ambient temperatures.
• Legacy parallel-memory designs — Fits board designs that use parallel DRAM interfaces and standard 3.3 V supply rails.

Unique Advantages

• Deterministic timing performance: 166 MHz clock rating with 5.4 ns access time and 2 ns write cycle time supports designs needing consistent read/write timing.
• Compact TSOP II package: 86-TSOP II (10.16 mm width) enables dense PCB layouts while retaining a parallel memory interface.
• Wide operating voltage window: 3.0–3.6 V compatibility aligns with common 3.3 V systems for straightforward power integration.
• Extended temperature support: −40°C to 85°C operation accommodates industrial and other temperature-sensitive deployments.
• Standard parallel interface: Direct replacement or integration into systems using conventional DRAM bus architectures.

Why Choose IC DRAM 128MBIT PAR 86TSOP II?

The AS4C4M32SA-6TIN balances compact packaging and standard parallel SDRAM architecture with defined timing and supply requirements, making it suitable for designs that require reliable volatile memory at 128 Mbit capacity. Its combination of 4M × 32 organization, 166 MHz clock rating, and extended temperature range supports engineering choices for predictable performance and robust environmental operation.

This device is well suited to engineers and procurement teams specifying parallel SDRAM for embedded, industrial, or legacy-interface systems where matching supply voltage, package footprint, and timing parameters are primary selection criteria.

If you need pricing, lead time, or availability details for the AS4C4M32SA-6TIN, request a quote or contact sales to discuss your requirements and volume needs.