AS4C8M16D1-5BINTR
| Part Description |
IC DRAM 128MBIT PAR 60TFBGA |
|---|---|
| Quantity | 830 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 20 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of AS4C8M16D1-5BINTR - 128Mbit DDR SDRAM Memory IC
The AS4C8M16D1-5BINTR from Alliance Memory is a 128-megabit DDR SDRAM memory integrated circuit configured as 8M x 16. This parallel interface DRAM operates at 200MHz clock frequency with 7ns access time, making it suitable for embedded systems requiring high-speed volatile memory. The device operates across an industrial temperature range of -40°C to 85°C, providing reliable performance in demanding environmental conditions.
Key Features
- Memory Architecture - 128Mbit capacity organized as 8M words by 16 bits, optimized for applications requiring word-level data access with moderate density.
- Performance - 200MHz clock frequency with 7ns access time and 15ns write cycle time enables fast data transfers for time-sensitive operations.
- Power Supply - 2.3V to 2.7V operating voltage reduces power consumption while maintaining high-speed performance characteristics.
- Interface - Parallel interface with DDR SDRAM technology provides double data rate transfers for improved bandwidth efficiency.
- Temperature Range - Extended operating range from -40°C to 85°C (ambient) ensures reliable operation in industrial environments subject to temperature extremes.
- Package - Compact 60-pin TFBGA package (8mm x 13mm) minimizes board space requirements in space-constrained designs.
Typical Applications
- Industrial Control Systems - This DDR SDRAM serves as main memory in PLCs, industrial computers, and process control equipment where the extended temperature range ensures consistent operation in factory floor environments.
- Embedded Computing - The 128Mbit capacity and parallel interface make this memory suitable for embedded processors and microcontrollers running firmware, buffering data streams, and managing application state in real-time systems.
- Communications Equipment - Network routers, switches, and telecommunications devices utilize this SDRAM for packet buffering and routing table storage, benefiting from the high clock frequency for rapid data access.
- Test and Measurement Instruments - Oscilloscopes, data acquisition systems, and analytical instruments leverage this memory for waveform capture and temporary data storage, where the 200MHz operation supports high sample rates.
- Medical Devices - Patient monitoring equipment and diagnostic instruments employ this memory for real-time data processing and display buffering, with the industrial temperature range supporting operation in varied clinical environments.
Unique Advantages
- Industrial Temperature Qualification: The -40°C to 85°C operating range eliminates the need for thermal management in many applications, reducing system complexity and cost.
- Proven DDR Technology: Mature SDRAM architecture ensures reliable sourcing, established design practices, and lower risk compared to newer memory technologies.
- Optimized Density: 128Mbit capacity provides sufficient memory for many embedded applications without the cost premium of higher-density devices.
- Space-Efficient Packaging: The 60-TFBGA format delivers a small footprint suitable for compact product designs while maintaining standard ball pitch for manufacturability.
- Low Voltage Operation: 2.3V to 2.7V supply voltage reduces power dissipation and heat generation, contributing to longer operating life and improved reliability.
- Active Lifecycle Status: Ongoing availability from Alliance Memory supports long product lifecycles typical of industrial and embedded applications.
Why Choose AS4C8M16D1-5BINTR?
This DDR SDRAM strikes an effective balance between performance, capacity, and environmental robustness for industrial and embedded designs. The 200MHz clock frequency and 7ns access time deliver sufficient speed for most real-time control and data processing tasks, while the industrial temperature rating ensures operation across diverse deployment environments without additional thermal protection. Engineers designing systems with multi-year production runs benefit from the active lifecycle status and the established supply base for this mature memory technology.
The AS4C8M16D1-5BINTR is particularly well-suited for cost-sensitive applications where 128Mbit capacity meets requirements without over-provisioning. The parallel interface simplifies integration with legacy processor architectures and provides deterministic timing characteristics valued in industrial control applications.
Get Started
For pricing, availability, and technical support for the AS4C8M16D1-5BINTR, contact our sales team. We provide detailed datasheets, reference designs, and application assistance to help you integrate this memory device into your next project.