AS4C8M16D1-5TCNTR

IC DRAM 128MBIT PAR 66TSOP II
Part Description

IC DRAM 128MBIT PAR 66TSOP II

Quantity 511 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of AS4C8M16D1-5TCNTR - 128Mbit DDR SDRAM Memory IC

The AS4C8M16D1-5TCNTR is a 128-megabit DDR SDRAM memory integrated circuit from Alliance Memory, Inc. Built on proven SDRAM - DDR technology, this volatile memory device is organized as 8M x 16 and operates at a 200MHz clock frequency. It serves applications requiring fast, parallel-interface memory in a compact 66-TSOP II package.

Designed for commercial temperature operation from 0°C to 70°C, this DRAM provides reliable temporary data storage for embedded systems, industrial controllers, networking equipment, and other digital electronics requiring cost-effective, high-speed volatile memory.

Key Features

  • Memory Architecture - 128-megabit capacity organized as 8M x 16, providing flexible data width configuration for various system designs.
  • DDR SDRAM Technology - Double data rate synchronous DRAM transfers data on both rising and falling clock edges, delivering efficient bandwidth at 200MHz operation.
  • Fast Access Time - 0.7ns (700 picosecond) access time enables rapid read operations for time-critical applications.
  • Low Voltage Operation - 2.3V to 2.7V supply voltage range reduces power consumption compared to traditional 3.3V memory devices.
  • Parallel Interface - Direct parallel memory interface simplifies integration with processors, FPGAs, and controllers without requiring serial conversion circuitry.
  • Compact Package - 66-pin TSOP II (0.400", 10.16mm width) surface-mount package optimizes board space in density-constrained designs.
  • Commercial Temperature Range - 0°C to 70°C (TA) operating range suits typical indoor and temperature-controlled environments.

Typical Applications

  • Embedded Computing Systems - This DDR SDRAM provides working memory for embedded processors in set-top boxes, point-of-sale terminals, and kiosks where its parallel interface and commercial temperature range align with typical deployment environments.
  • Networking Equipment - Routers, switches, and access points utilize this memory for packet buffering and routing tables, benefiting from its 200MHz clock speed to handle network traffic efficiently.
  • Industrial Control Systems - PLCs, HMIs, and process controllers leverage this DRAM for program execution and data buffering in factory automation environments within the 0°C to 70°C operating range.
  • Data Acquisition Devices - Test and measurement instruments use this memory for temporary storage of captured waveforms and sensor data, taking advantage of its fast access time for real-time processing.
  • Printer and Imaging Systems - Digital printers and copiers employ this DRAM for image buffering and raster processing, where the 128-megabit capacity handles moderate-resolution graphics efficiently.

Unique Advantages

  • Legacy System Support: Provides a direct replacement option for existing DDR SDRAM designs, maintaining compatibility with established board layouts and BOM structures.
  • Simplified Sourcing: Standard JEDEC-compliant DDR SDRAM specifications enable cross-referencing and second-sourcing opportunities to reduce supply chain risk.
  • Reduced Power Budget: 2.3V to 2.7V operation lowers system power consumption compared to older 3.3V DRAM technologies, extending battery life in portable applications or reducing cooling requirements.
  • Proven Technology Foundation: DDR SDRAM's widespread adoption and mature manufacturing processes provide predictable performance characteristics and availability.
  • Cost-Effective Memory Solution: Balances capacity, speed, and price for applications where newer DDR2/DDR3 technologies would be over-specified and more expensive.
  • Direct Processor Integration: Parallel interface eliminates the need for serial-to-parallel conversion logic, simplifying board design and reducing component count.

Why Choose AS4C8M16D1-5TCNTR?

The AS4C8M16D1-5TCNTR offers a practical memory solution for designs requiring DDR SDRAM in commercial temperature environments. Its 128-megabit capacity and 8M x 16 organization fit applications where moderate memory density meets processing needs without the complexity or cost of higher-density alternatives. The 66-TSOP II package provides a proven footprint for established designs and manufacturing processes.

This device is particularly well-suited for maintenance, repair, and operations (MRO) scenarios supporting legacy systems, as well as cost-sensitive new designs in industrial control, networking, and embedded computing markets. Please note this component has an obsolete lifecycle status—confirm long-term availability with your Alliance Memory representative before committing to new designs.

Get a Quote

Contact our sales team to request pricing, availability information, and technical support for the AS4C8M16D1-5TCNTR. Our specialists can help you evaluate whether this DDR SDRAM meets your application requirements and assist with system integration questions.

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