AS4C8M16D1-5TCNTR
| Part Description |
IC DRAM 128MBIT PAR 66TSOP II |
|---|---|
| Quantity | 511 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of AS4C8M16D1-5TCNTR - 128Mbit DDR SDRAM Memory IC
The AS4C8M16D1-5TCNTR is a 128-megabit DDR SDRAM memory integrated circuit from Alliance Memory, Inc. Built on proven SDRAM - DDR technology, this volatile memory device is organized as 8M x 16 and operates at a 200MHz clock frequency. It serves applications requiring fast, parallel-interface memory in a compact 66-TSOP II package.
Designed for commercial temperature operation from 0°C to 70°C, this DRAM provides reliable temporary data storage for embedded systems, industrial controllers, networking equipment, and other digital electronics requiring cost-effective, high-speed volatile memory.
Key Features
- Memory Architecture - 128-megabit capacity organized as 8M x 16, providing flexible data width configuration for various system designs.
- DDR SDRAM Technology - Double data rate synchronous DRAM transfers data on both rising and falling clock edges, delivering efficient bandwidth at 200MHz operation.
- Fast Access Time - 0.7ns (700 picosecond) access time enables rapid read operations for time-critical applications.
- Low Voltage Operation - 2.3V to 2.7V supply voltage range reduces power consumption compared to traditional 3.3V memory devices.
- Parallel Interface - Direct parallel memory interface simplifies integration with processors, FPGAs, and controllers without requiring serial conversion circuitry.
- Compact Package - 66-pin TSOP II (0.400", 10.16mm width) surface-mount package optimizes board space in density-constrained designs.
- Commercial Temperature Range - 0°C to 70°C (TA) operating range suits typical indoor and temperature-controlled environments.
Typical Applications
- Embedded Computing Systems - This DDR SDRAM provides working memory for embedded processors in set-top boxes, point-of-sale terminals, and kiosks where its parallel interface and commercial temperature range align with typical deployment environments.
- Networking Equipment - Routers, switches, and access points utilize this memory for packet buffering and routing tables, benefiting from its 200MHz clock speed to handle network traffic efficiently.
- Industrial Control Systems - PLCs, HMIs, and process controllers leverage this DRAM for program execution and data buffering in factory automation environments within the 0°C to 70°C operating range.
- Data Acquisition Devices - Test and measurement instruments use this memory for temporary storage of captured waveforms and sensor data, taking advantage of its fast access time for real-time processing.
- Printer and Imaging Systems - Digital printers and copiers employ this DRAM for image buffering and raster processing, where the 128-megabit capacity handles moderate-resolution graphics efficiently.
Unique Advantages
- Legacy System Support: Provides a direct replacement option for existing DDR SDRAM designs, maintaining compatibility with established board layouts and BOM structures.
- Simplified Sourcing: Standard JEDEC-compliant DDR SDRAM specifications enable cross-referencing and second-sourcing opportunities to reduce supply chain risk.
- Reduced Power Budget: 2.3V to 2.7V operation lowers system power consumption compared to older 3.3V DRAM technologies, extending battery life in portable applications or reducing cooling requirements.
- Proven Technology Foundation: DDR SDRAM's widespread adoption and mature manufacturing processes provide predictable performance characteristics and availability.
- Cost-Effective Memory Solution: Balances capacity, speed, and price for applications where newer DDR2/DDR3 technologies would be over-specified and more expensive.
- Direct Processor Integration: Parallel interface eliminates the need for serial-to-parallel conversion logic, simplifying board design and reducing component count.
Why Choose AS4C8M16D1-5TCNTR?
The AS4C8M16D1-5TCNTR offers a practical memory solution for designs requiring DDR SDRAM in commercial temperature environments. Its 128-megabit capacity and 8M x 16 organization fit applications where moderate memory density meets processing needs without the complexity or cost of higher-density alternatives. The 66-TSOP II package provides a proven footprint for established designs and manufacturing processes.
This device is particularly well-suited for maintenance, repair, and operations (MRO) scenarios supporting legacy systems, as well as cost-sensitive new designs in industrial control, networking, and embedded computing markets. Please note this component has an obsolete lifecycle status—confirm long-term availability with your Alliance Memory representative before committing to new designs.
Get a Quote
Contact our sales team to request pricing, availability information, and technical support for the AS4C8M16D1-5TCNTR. Our specialists can help you evaluate whether this DDR SDRAM meets your application requirements and assist with system integration questions.