AS4C8M16D1-5TIN

The AS4C8M16D1-5TIN is a 128 Mbit DDR1 synchronous DRAM organized as 8M × 16 from Alliance Memory, Inc. It implements a parallel DDR interface with internal pipelined architecture and four internal banks for burst-oriented read/write access.

Designed for applications that require high memory bandwidth and predictable timing, this device delivers 200 MHz clock operation with programmable burst lengths and mode registers, packaged in a 66-pin TSOP II suitable for industrial temperature environments.

Key Features

• Core / Memory Architecture  128 Mbit DDR SDRAM arranged as 8M × 16 (quad 2M × 16 banks), supporting burst-oriented read and write accesses.
• Performance  Fast clock rate up to 200 MHz and an access time of 700 ps; write cycle time (word/page) of 15 ns.
• DDR Functionality  Double data rate operation with data outputs on both rising edges of CK/CK; differential clock inputs and bi-directional DQS for data strobe timing.
• Programmability & Burst Control  Programmable Mode and Extended Mode registers with CAS latencies of 2, 2.5, 3 and selectable burst lengths of 2, 4, or 8 (sequential or interleaved).
• Power & I/O  Low-voltage operation with VDD & VDDQ = 2.5V ±5% (specified voltage range 2.3 V to 2.7 V) and SSTL_2 I/O interface.
• Power Management & Reliability  Auto Refresh and Self Refresh support with 4096 refresh cycles per 64 ms, plus precharge and active power-down modes.
• Package & Temperature  66-pin TSOP II (66-TSSOP, 0.400" / 10.16 mm width) package rated for industrial operation from −40°C to 85°C (TA).
• Compliance Indicators  Datasheet notes Pb free and Halogen free construction for this DDR SDRAM variant.

Typical Applications

• High-bandwidth memory subsystems  Well suited for designs requiring high memory bandwidth and predictable burst access patterns.
• Industrial temperature systems  Use in equipment that must operate across −40°C to 85°C ambient temperature ranges.
• Parallel-interface memory expansion  Integration where a parallel DDR SDRAM with SSTL_2 I/O and TSOP II footprint is required.

Unique Advantages

• Industrial temperature rating: Specified operation from −40°C to 85°C supports deployments in temperature-critical environments.
• 200 MHz DDR operation: Double data-rate transfers at a 200 MHz clock provide increased throughput for burst accesses.
• Flexible timing and burst options: CAS latencies (2 / 2.5 / 3) and burst lengths (2, 4, 8) plus programmable mode registers allow tuning for system timing and performance.
• Robust refresh and power features: Auto and self refresh plus power-down modes and 4096 refresh cycles/64 ms support reliable data retention and power management.
• Industry-standard package: 66-pin TSOP II (0.65 mm pin pitch) offers a compact footprint compatible with existing TSOP II board designs.
• Low-voltage operation: VDD/VDDQ = 2.5V ±5% (2.3 V to 2.7 V) reduces supply requirements for DDR memory subsystems.

Why Choose AS4C8M16D1-5TIN?

The AS4C8M16D1-5TIN provides a compact, industrial-temperature DDR1 memory option with configurable burst and timing settings for predictable high-bandwidth performance. Its quad-bank architecture, differential clocking, bi-directional DQS and SSTL_2 interface make it suitable where synchronous, burst-oriented memory is required.

Engineers designing systems that demand stable operation across wide temperature ranges, controlled timing options, and a TSOP II footprint will find this 128 Mbit DDR SDRAM a practical building block. The device's refresh, power-down, and programmability features support long-term robustness and integration into established parallel-memory designs.

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