AS4C8M16D1-5TCN

IC DRAM 128MBIT PAR 66TSOP II
Part Description

IC DRAM 128MBIT PAR 66TSOP II

Quantity 742 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerAlliance Memory, Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of AS4C8M16D1-5TCN - 128Mbit DDR SDRAM Memory IC

The AS4C8M16D1-5TCN from Alliance Memory is a 128-megabit synchronous dynamic random-access memory (SDRAM) designed for parallel interface applications. Built on DDR SDRAM technology, this memory IC delivers reliable data storage with an 8M x 16 organization that suits embedded systems requiring moderate-density volatile memory. With a 200 MHz clock frequency and 0.7 ns access time, it provides responsive performance for industrial and commercial computing platforms.

Key Features

  • DDR SDRAM Technology - Double data rate synchronous DRAM architecture enables data transfer on both rising and falling clock edges, maximizing bandwidth efficiency within the 200 MHz operating frequency.
  • 128Mbit Capacity (8M x 16) - Organized as 8 million words by 16 bits, this memory configuration balances density and data bus width for embedded controller and processor applications.
  • 0.7 ns Access Time - Fast access timing supports responsive read operations critical for real-time control systems and data acquisition applications.
  • 2.3V to 2.7V Operation - Low-voltage supply range reduces power consumption and heat generation compared to traditional 3.3V memory devices.
  • 15 ns Write Cycle Time - Efficient write performance enables rapid data updates in buffering and caching applications.
  • 66-TSOP II Package - Standard thin small outline package with 0.400" (10.16mm) width provides space-efficient board mounting in a widely supported footprint.

Typical Applications

  • Embedded Systems - This DDR SDRAM serves as main memory or cache in microcontroller-based designs where the 128Mbit capacity supports moderate program and data storage requirements while the parallel interface simplifies integration with legacy processor architectures.
  • Industrial Controllers - The 0°C to 70°C operating range suits commercial-grade control systems in factory automation and process monitoring where reliable volatile memory is needed for runtime variables and buffering.
  • Set-Top Boxes and Media Players - The memory's DDR architecture and 200 MHz clock support video buffering and UI rendering in consumer electronics applications requiring cost-effective DRAM solutions.
  • Legacy System Upgrades - As a direct replacement for older SDRAM modules, this component enables memory upgrades in existing designs without requiring significant board redesign.

Unique Advantages

  • Proven DDR SDRAM Architecture: Well-established technology with broad ecosystem support simplifies design integration and reduces development risk.
  • Parallel Interface Compatibility: Direct connection to parallel memory buses eliminates the need for protocol conversion circuitry required by serial memory alternatives.
  • Low-Voltage Operation: The 2.3V to 2.7V supply range reduces system power consumption and allows compatibility with modern low-voltage logic families.
  • Standard Package Footprint: The 66-TSOP II package uses a widely supported form factor that fits existing PCB layouts and assembly processes.
  • Cost-Effective Memory Solution: DDR SDRAM technology offers a balanced price-performance ratio for applications that don't require the bandwidth of newer DDR3 or DDR4 standards.

Why Choose AS4C8M16D1-5TCN?

The AS4C8M16D1-5TCN addresses the needs of designers working with embedded systems and industrial controllers that utilize parallel memory interfaces. Its 128Mbit density strikes a practical balance for moderate-complexity applications, while the DDR SDRAM technology provides adequate performance without the complexity and cost of newer memory standards. The standard TSOP package and parallel interface make it particularly suitable for retrofitting legacy designs or developing new products where established memory technologies reduce supply chain risk.

This memory IC is well-suited for commercial-grade applications operating within the 0°C to 70°C temperature range. Engineers can rely on Alliance Memory's focus on memory solutions to support product lifecycle requirements in embedded and industrial markets.

Get Started with AS4C8M16D1-5TCN

Contact our sales team to request a quote for the AS4C8M16D1-5TCN or to discuss your memory requirements. Our technical support staff can assist with design integration questions and provide additional documentation to help you evaluate this DDR SDRAM for your application.

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