AS4C8M16S-7TCN
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 203 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Alliance Memory, Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 2 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of AS4C8M16S-7TCN - 128Mbit Synchronous DRAM
The AS4C8M16S-7TCN is a high-performance 128-megabit synchronous dynamic random access memory (SDRAM) from Alliance Memory. This parallel-interface DRAM features an 8M x 16 memory organization and operates at clock frequencies up to 143MHz, making it well-suited for embedded systems and legacy equipment requiring reliable volatile memory storage.
With a 5.4ns access time and 2ns write cycle time, this SDRAM delivers the speed and responsiveness needed for data-intensive applications. The device operates from a 3V to 3.6V supply and is housed in a compact 54-pin TSOP II package.
Key Features
- 128Mbit Capacity - Organized as 8 million words by 16 bits, providing substantial volatile storage for buffering, caching, and data processing tasks.
- High-Speed Performance - 143MHz clock frequency with 5.4ns access time and 2ns write cycle time ensures rapid data throughput for time-critical operations.
- Standard SDRAM Technology - Synchronous operation simplifies integration with common microcontrollers and processors using parallel memory interfaces.
- Parallel Interface - Traditional parallel bus architecture provides straightforward connectivity and proven compatibility with existing system designs.
- Compact Package - 54-pin TSOP II form factor (10.16mm width) enables space-efficient board layouts in size-constrained applications.
- Commercial Temperature Range - Qualified for 0°C to 70°C operation, suitable for standard indoor and controlled-environment installations.
- 3.3V Operation - 3V to 3.6V supply voltage range aligns with common logic levels in embedded systems, reducing power conversion requirements.
Typical Applications
- Embedded Computing - This SDRAM serves as main memory or cache in embedded processors and microcontroller systems where parallel memory interfaces are standard and the 128Mbit capacity meets application requirements.
- Legacy Equipment Maintenance - Provides a replacement memory component for aging industrial equipment, medical devices, and telecommunications infrastructure that relies on this specific SDRAM configuration.
- Data Buffering - The high-speed access and write cycle times make this memory effective for buffering data streams in communication equipment and data acquisition systems operating within commercial temperature ranges.
- Test and Measurement Instruments - Supports data capture and processing functions in benchtop and portable test equipment where the compact TSOP II package and 3.3V operation simplify integration.
Unique Advantages
- Proven SDRAM Architecture: Leverages mature synchronous DRAM technology that has established compatibility with a wide range of processors and memory controllers.
- Straightforward Integration: Parallel interface and standard SDRAM timing enable rapid design-in without complex protocol implementation.
- Space-Efficient Form Factor: TSOP II packaging balances pin count with board footprint, optimizing density in multi-memory configurations.
- Fast Data Access: The 5.4ns access time supports applications requiring quick read operations and minimal latency.
- Common Supply Voltage: 3.3V nominal operation reduces power supply complexity and aligns with industry-standard logic levels.
- Alliance Memory Reliability: Sourced from Alliance Memory, a manufacturer specializing in legacy and long-lifecycle memory solutions for sustained availability.
Why Choose AS4C8M16S-7TCN?
The AS4C8M16S-7TCN addresses the needs of engineers maintaining existing designs or developing new products that require traditional parallel SDRAM technology. Its combination of 128Mbit capacity, 143MHz operation, and compact packaging makes it suitable for embedded systems, legacy equipment upgrades, and specialized industrial applications where this memory configuration is specified.
This component represents a practical choice when your design calls for proven SDRAM technology with parallel interface compatibility and commercial-grade temperature tolerance.
Request a Quote
Contact our sales team to discuss your memory requirements, volume pricing, and delivery schedules for the AS4C8M16S-7TCN. We can help you evaluate whether this SDRAM meets your application needs and provide technical support for integration into your design.