AS4C8M16SA-6BAN

The IC DRAM 128MBIT PAR 54TFBGA is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It provides defined access and timing characteristics—5 ns access time, 166 MHz clock frequency and a 12 ns write cycle time (word/page)—in a compact 54-TFBGA (8×8) package.

Designed and qualified for automotive use (AEC-Q100), this device supports a 3.0 V to 3.6 V supply and an operating temperature range of -40°C to 105°C, making it suitable for applications that require predictable DRAM performance across extended temperature and voltage conditions.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16 with a parallel memory interface for direct parallel memory integration.
• Performance 166 MHz clock frequency, 5 ns access time and a 12 ns write cycle time (word/page) provide defined timing for system memory operations.
• Voltage Range Operates from 3.0 V to 3.6 V, enabling use in systems with nominal 3 V supply domains.
• Package and Footprint 54-TFBGA package (8×8) offers a compact surface-mount form factor for space-constrained designs.
• Automotive Qualification AEC-Q100 qualification and an operating temperature range of -40°C to 105°C support deployment in automotive and similarly demanding environments.
• Memory Type Volatile DRAM format suitable for temporary data storage, buffering and working memory in embedded systems.

Typical Applications

• Automotive Electronics AEC-Q100 qualification and wide temperature range make it appropriate for automotive control modules and electronic assemblies that require parallel SDRAM.
• Embedded Systems 128 Mbit capacity and parallel interface are suitable for embedded platforms needing temporary data buffering and working memory.
• Industrial Electronics Operates across -40°C to 105°C and a 3.0 V–3.6 V supply range for industrial controllers and instrumentation operating in extended-temperature environments.

Unique Advantages

• AEC-Q100 Qualified: Meets automotive qualification to support deployment in regulated automotive electronic systems.
• Defined Timing Performance: 5 ns access time and 166 MHz clock frequency deliver predictable DRAM timing for system designers.
• Wide Operating Range: -40°C to 105°C temperature rating and 3.0 V–3.6 V supply tolerance for robust operation under varied conditions.
• Compact BGA Package: 54-TFBGA (8×8) package minimizes PCB area while supporting surface-mount assembly.
• Parallel Interface: Parallel memory interface simplifies integration into systems designed around standard parallel DRAM connections.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

This 128 Mbit parallel SDRAM combines defined timing characteristics and an automotive-grade qualification to deliver reliable, predictable volatile memory performance for designs operating across extended temperatures and standard 3 V-class supplies. Its compact 54-TFBGA footprint and parallel interface make it suitable for embedded and industrial systems that require a stable DRAM resource for buffering and temporary storage.

Specify this device when you need an AEC-Q100 qualified SDRAM with known access and cycle timings, a broad operating temperature window, and a compact surface-mount package for space-constrained, reliability-focused designs.

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