AS4C8M16S-7TCNTR

The AS4C8M16S-7TCNTR is a 128-megabit synchronous DRAM organized as 8M x 16, providing reliable volatile memory for embedded systems and computing applications. This parallel interface SDRAM operates at clock frequencies up to 143MHz with a fast 5.4ns access time, making it suitable for data buffering, temporary storage, and system memory applications in commercial temperature environments.

Designed in a compact 54-TSOP II package, this memory device delivers efficient performance for cost-sensitive designs requiring moderate speed and density.

Key Features

• Memory Architecture - 128Mbit capacity configured as 8M x 16 organization, providing flexible word-based addressing for 16-bit data bus systems.
• Performance Specifications - 143MHz clock frequency support with 5.4ns access time and 2ns write cycle time enables responsive data handling for real-time applications.
• Power Requirements - Operates on standard 3V to 3.6V supply voltage, compatible with common embedded system power rails.
• Interface - Parallel memory interface provides direct, high-throughput data transfer without the complexity of serial protocols.
• Package - 54-pin TSOP II package (10.16mm width) offers a compact footprint for space-constrained PCB layouts.
• Operating Range - Commercial temperature range of 0°C to 70°C (TA) suits indoor and controlled environment applications.

Typical Applications

• Embedded Computing Systems - This SDRAM serves as working memory in embedded processors and controllers where moderate density and speed support program execution and data manipulation tasks.
• Data Buffering - The 128Mbit capacity provides temporary storage for data acquisition systems, communications equipment, and signal processing applications where incoming data streams require buffering before processing or transmission.
• Consumer Electronics - Suitable for set-top boxes, digital displays, and multimedia devices operating in controlled environments where the commercial temperature range and parallel interface meet system requirements.
• Legacy System Upgrades - Provides memory replacement or expansion options for existing designs built around parallel SDRAM architectures, maintaining compatibility with established product platforms.

Unique Advantages

• Proven SDRAM Technology: Synchronous DRAM architecture offers predictable timing characteristics and straightforward integration with standard memory controllers.
• Cost-Effective Density: 128Mbit capacity balances storage needs with component cost for applications where higher densities would be underutilized.
• Parallel Interface Simplicity: Direct parallel access eliminates protocol overhead and simplifies firmware development compared to serial memory alternatives.
• Standard Supply Voltage: 3V to 3.6V operation aligns with common embedded system power designs, reducing need for additional voltage regulation.
• Compact Form Factor: TSOP II package provides high pin density in a surface-mount format compatible with automated assembly processes.

Why Choose AS4C8M16S-7TCNTR?

The AS4C8M16S-7TCNTR addresses the needs of embedded system designers seeking reliable, cost-effective volatile memory with a parallel interface. Its 8M x 16 organization aligns well with 16-bit processor architectures, while the 143MHz clock support and 5.4ns access time deliver adequate performance for many commercial applications. The standard 3V supply voltage and compact TSOP II package simplify board design and assembly.

Please note this component has an Obsolete lifecycle status. Designers should verify availability and consider long-term supply planning or alternative components for new designs. For existing platforms, this device may serve as a replacement part subject to inventory availability.

Request a Quote

For current availability, pricing, and technical support for the AS4C8M16S-7TCNTR, please contact our sales team. We can assist with volume requirements, lead times, and alternative recommendations for ongoing designs.