AS4C8M16SA-6BINTR

The AS4C8M16SA-6BINTR is a volatile SDRAM device providing 128 Mbit of memory organized as 8M × 16 with a parallel memory interface. It delivers a clock frequency of 166 MHz and a 5 ns access time for systems that require synchronous DRAM performance in a compact package.

Offered in a 54-TFBGA (8×8) package with a supply voltage range of 3.0 V to 3.6 V and an operating temperature range of -40°C to 85°C, this device addresses designs that need moderate-density SDRAM with defined timing and environmental specifications.

Key Features

• Memory Core 128 Mbit DRAM organized as 8M × 16, providing parallel data access appropriate for synchronous DRAM implementations.
• Performance 166 MHz clock frequency and 5 ns access time enable synchronous operation with 12 ns write cycle time (word/page) for predictable timing behavior.
• Interface Parallel memory interface for direct integration into parallel SDRAM controller architectures.
• Power Supply voltage range of 3.0 V to 3.6 V to match common 3 V SDRAM system rails.
• Package 54-TFBGA (8×8) package offering a compact footprint for space-constrained board designs.
• Environmental Range Operating temperature from -40°C to 85°C (TA) for deployments across a wide ambient temperature span.

Unique Advantages

• Defined SDRAM capacity: 128 Mbit organized as 8M × 16 provides a clear density option for system memory budgeting and address mapping.
• Synchronous timing characteristics: 166 MHz clock and 5 ns access time with 12 ns write cycle time enable deterministic memory timing in synchronous designs.
• Wide voltage compatibility: 3.0 V to 3.6 V supply range facilitates integration with common 3 V system power rails.
• Compact package footprint: 54-TFBGA (8×8) packaging reduces board space while maintaining BGA reliability characteristics.
• Extended ambient range: −40°C to 85°C operating temperature supports applications requiring broader temperature tolerance.

Why Choose AS4C8M16SA-6BINTR?

The AS4C8M16SA-6BINTR positions itself as a straightforward SDRAM option where a 128 Mbit parallel-access memory with defined synchronous timing is required. Its combination of 166 MHz clocking, 5 ns access time, and compact 54-TFBGA package makes it suitable for designs that need predictable SDRAM performance in a space-efficient form factor.

With a 3.0 V–3.6 V supply window and an operating temperature range of −40°C to 85°C, the device provides electrical and environmental headroom for a range of system conditions, supporting longer-term reliability and consistent behavior across specified operating conditions.

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