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The IC DRAM 128MBIT PAR 54TSOP II is a 128 Mbit volatile memory device implemented as SDRAM with a parallel interface. It is organized as 8M × 16 and supplied in a 54-TSOP II package with a 0.400" (10.16 mm) width.

Key electrical and timing characteristics include a clock frequency of 166 MHz, a 5 ns access time, a 12 ns write cycle time (word/page), and an operating voltage range of 3.0 V to 3.6 V. The device is specified for operation from −40 °C to 85 °C.

Key Features

• Memory Organization 128 Mbit capacity arranged as 8M × 16 for parallel DRAM implementations.
• Technology & Timing SDRAM technology with a clock frequency of 166 MHz and a 5 ns access time; write cycle time (word/page) is 12 ns.
• Interface Parallel memory interface for integration with parallel memory controllers and legacy parallel DRAM architectures.
• Voltage Rated supply voltage range of 3.0 V to 3.6 V.
• Package 54-TSOP II package (0.400", 10.16 mm width) — standard TSOP footprint and supplier device package specified as 54-TSOP II.
• Operating Temperature Range Specified for use from −40 °C to 85 °C (TA).
• Memory Type Volatile DRAM intended for temporary data storage in system memory applications.

Typical Applications

• Parallel memory subsystems — Acts as on-board parallel SDRAM for designs requiring 128 Mbit volatile memory in a 16-bit data organization.
• Embedded controllers and modules — Provides SDRAM storage where a 54-TSOP II package and 3.0–3.6 V supply are required.
• Temperature-challenged systems — Suitable for applications requiring operation across −40 °C to 85 °C.

Unique Advantages

• Standard 54-TSOP II form factor: 0.400" (10.16 mm) width TSOP package for compatibility with established PCB footprints.
• Parallel 16-bit organization: 8M × 16 arrangement supports designs expecting a 16-bit parallel DRAM interface.
• Defined timing performance: 166 MHz clock, 5 ns access time and 12 ns write cycle time provide clear timing targets for memory subsystem design.
• Wide operating voltage range: 3.0 V to 3.6 V rating fits systems using standard 3.3 V supply rails.
• Extended temperature rating: Specified operation from −40 °C to 85 °C for designs that require broader ambient temperature support.
• Volatile DRAM storage: Provides temporary data storage suitable for applications that require resettable memory content.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

This 128 Mbit SDRAM delivers a defined combination of capacity, parallel 16-bit organization, and explicit timing parameters (166 MHz clock, 5 ns access, 12 ns write cycle) in a 54-TSOP II package. The device’s 3.0–3.6 V supply range and −40 °C to 85 °C operating window make it suitable for designs that require predictable electrical and environmental characteristics.

The IC DRAM 128MBIT PAR 54TSOP II is appropriate for engineers specifying a 128 Mbit parallel SDRAM in a standard TSOP footprint, and for projects where clear timing and voltage specifications are needed for memory subsystem integration. Its defined feature set supports design portability and supply-chain clarity with manufacturer Alliance Memory, Inc. identified as the supplier.

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