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The IC DRAM 128MBIT PAR 54TFBGA is a 128 Mbit volatile memory device implemented as SDRAM with a parallel interface and an organization of 8M × 16. It provides a compact 54‑TFBGA (8×8) package and is specified for operation from 0°C to 70°C with a supply voltage range of 3.0V to 3.6V.

Designed for systems that require parallel SDRAM storage, the device offers measurable performance characteristics including a 143 MHz clock frequency and a 5.4 ns access time, supporting use in designs where deterministic DRAM access timing and a small-footprint BGA package are important.

Key Features

• Memory Core 128 Mbit DRAM organized as 8M × 16, provided as volatile SDRAM memory for parallel data access.
• Performance 143 MHz clock frequency with a specified access time of 5.4 ns and a write cycle time (word/page) of 14 ns to support predictable timing in memory subsystems.
• Power Operates from a 3.0V to 3.6V supply range, allowing integration into systems with standard 3.3V rails.
• Package & Mounting 54‑TFBGA (8×8) package provides a compact footprint for surface-mount mounting in space-constrained board designs.
• Operating Conditions Specified ambient operating temperature range of 0°C to 70°C (TA) for use in general-purpose temperature environments.
• Interface Parallel memory interface suitable for designs requiring direct parallel SDRAM connectivity and timing control.

Typical Applications

• Embedded systems — Provides 128 Mbit parallel SDRAM capacity for embedded designs that require external volatile memory with defined timing characteristics.
• Consumer electronics — Can serve as system or buffer memory in compact consumer devices that use a parallel SDRAM interface and 3.3V supply rails.
• Industrial control — Fits applications needing deterministic access times (5.4 ns) and a robust BGA package for space-efficient board layouts.

Unique Advantages

• Compact BGA footprint: 54‑TFBGA (8×8) package minimizes board area while preserving high-density memory capacity.
• Predictable timing: 5.4 ns access time and 14 ns write cycle time deliver repeatable performance for timing-sensitive memory operations.
• Standard supply compatibility: 3.0V–3.6V operating range aligns with common 3.3V system power rails, simplifying power design.
• Parallel SDRAM interface: Direct parallel connectivity for systems that require straightforward SDRAM integration and control.
• Moderate temperature rating: 0°C–70°C operating range suitable for general-purpose commercial applications.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IC DRAM 128MBIT PAR 54TFBGA combines a clear specification set—128 Mbit capacity in an 8M × 16 organization, 143 MHz clocking, and a 5.4 ns access time—with a compact 54‑TFBGA package and standard 3.0V–3.6V supply requirements. This positioning makes it suitable for designers seeking a straightforward parallel SDRAM device with predictable timing and a small PCB footprint.

Choose this device for projects that require reliable volatile memory capacity in a BGA package and where the listed electrical and thermal specifications align with system requirements. Its documented timing and power characteristics support scalable implementation in a range of general-purpose electronic designs.

For pricing, availability, or to request a quote, submit your product inquiry to the distributor or request a formal quotation through the vendor channels for this part.