EN35QXR512A-104WIP(2SC)
| Part Description |
512 Mbit SPI NOR Flash, Industrial WSON |
|---|---|
| Quantity | 1,399 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-pin WSON 5x6mm | Memory Format | DRAM | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 500 µs | Packaging | 8-pin WSON 5x6mm | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN35QXR512A-104WIP(2SC) – 512 Mbit SPI NOR Flash, Industrial WSON
The EN35QXR512A-104WIP(2SC) is a 512 Mbit serial SPI NOR flash memory device in an 8-contact WSON (6×5 mm) package, offered for industrial-temperature applications. It implements a serial interface architecture with Single, Dual and Quad SPI modes and a uniform 4-Kbyte sector structure suited for code and data storage in embedded systems.
Designed for field-programmable systems, the device delivers high read throughput (104 MHz Fast Read support) and fast program/erase performance, while providing software and hardware write-protection, security features and long-term data retention for robust deployed applications.
Key Features
- Memory and Organization — 512 Mbit capacity organized as 2M × 8 with 256-byte programmable pages, 262,144 pages total, and uniform 4-Kbyte sectors (16,384 sectors).
- High-performance Read — Supports Single/Dual/Quad I/O Fast Read with a 104 MHz clock rate (Quad I/O Fast Read up to 133 MHz available by specific ordering).
- Flexible SPI Interface — Standard, Dual and Quad SPI command sets with support for standard pins (CLK, CS#, DI, DO) and additional DQ₂/DQ₃ signals for dual/quad operation.
- Program/Erase Speed — Typical page program time 0.5 ms (500 µs); typical sector erase ~40 ms, half-block ~200 ms, block ~300 ms, chip erase ~120 s.
- Endurance and Retention — Minimum 100K program/erase cycles per sector or block and 20-year data retention.
- Power — Single power-supply operation with full voltage range support indicated in the product series documentation; low-power characteristics include typical 24 mA active current and typical 2 µA power-down current.
- Security and Reliability — Lockable 3×512-byte OTP security sector, Replay-Protected Monotonic Counter (RPMC), Read Unique ID and Serial Flash Discoverable Parameters (SFDP) support.
- Package and Temperature — 8-contact WSON (6×5 mm) package option and industrial operating temperature range of −40 °C to 85 °C.
Typical Applications
- Embedded firmware storage — Store boot code and firmware with sector-level erase and page program granularity for efficient updates and patches.
- Field firmware update systems — Fast program and erase timings plus software/hardware write protection enable reliable in-system updates and code patching.
- Secure data and counters — Use RPMC, unique ID and OTP sectors for secure counters, device identity and protected configuration data.
- Industrial control and automation — Industrial temperature rating and compact WSON packaging make the device suitable for deployed industrial electronics requiring robust non-volatile storage.
Unique Advantages
- Large non-volatile capacity: 512 Mbit density provides ample space for firmware, file systems and data logs in a single-device solution.
- Multi-mode SPI flexibility: Standard, Dual and Quad I/O support lets designers trade pin usage for throughput without changing the memory family.
- Uniform sector architecture: 4-Kbyte sectors and block-level erase allow targeted updates and minimize erase cycles to preserve endurance.
- Security-oriented features: OTP region, unique ID and RPMC support implement device-level protection and anti-replay mechanisms for secure applications.
- Industrial-grade packaging and temperature: WSON 6×5 mm packaging and −40 °C to 85 °C rating fit space-constrained industrial designs requiring rugged operation.
- Proven program/erase lifecycle: Minimum 100K cycles and 20-year retention give long-term reliability for deployed systems.
Why Choose EN35QXR512A-104WIP(2SC)?
The EN35QXR512A-104WIP(2SC) positions itself as a high-capacity, high-performance SPI NOR flash device engineered for embedded and industrial applications that require robust non-volatile storage, flexible SPI modes and security features. Its combination of large memory density, fast read/program characteristics and sector-level protection supports firmware storage, field updates and secure data retention.
Ideal for designers building industrial controllers, firmware-updatable products and devices that require compact packaging, long data retention and strong endurance, this device delivers a practical balance of performance, protection and industrial suitability backed by the EN35QXR512A series specifications.
Request a quote or submit an inquiry to evaluate availability, lead times and ordering options for the EN35QXR512A-104WIP(2SC).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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